2inch 4inch 6inch 8inch 12inch Silicon Carbide wafer SiC 4H-N Dummy
Grade Rrime Grade High Hardness Semiconductor Materials
About SiC wafer
Silicon carbide wafer is a kind of wide band gap semiconductor
material. The main application areas of silicon carbide wafers are
LED solid lighting and high frequency devices. The material has
several times higher than traditional silicon band gap, drift
speed, breakdown voltage, thermal conductivity, high temperature
resistance and other excellent characteristics, in high
temperature, high pressure, high frequency, high power,
photoelectric, radiation resistance, microwave and other electronic
applications and aerospace, military, nuclear energy and other
extreme environment applications have irreplaceable advantages.
Properties of SiC wafer
-Breakdown electric field: The breakdown electric field of silicon
carbide is about ten times that of silicon, so that silicon carbide
devices can work at higher voltages without breakdown due to
excessive electric field.
-Thermal conductivity: The thermal conductivity of silicon carbide
is three times that of silicon, so that silicon carbide devices can
still maintain good heat dissipation performance in high
temperature environments.
-Saturated electron migration speed: silicon carbide materials have
a higher saturated electron migration speed, making the performance
of silicon carbide devices at high frequencies better.
-Working temperature: The working temperature of silicon carbide
power devices can reach more than 600 ° C, which is 4 times that of
the same silicon devices, and can withstand more extreme working
environments.
Other production of our company
Growth Techniques of SiC wafer
At present, the industrial production of silicon carbide substrate
is mainly based on PVT method. This method needs to sublimate the powder with high temperature
and vacuum, and then let the components grow on the seed surface
through thermal field control, so as to obtain the silicon carbide
crystals.
Application of SiC wafer
-Power electronics:
High-frequency switches: in inverters and converters, used in
electric vehicles and renewable energy systems.
Power amplifiers: In wireless communications and RF applications,
SiC devices are capable of handling high power and high frequency
signals.
-Electric drive systems: SiC chips are used in electric vehicle
motor control and charging systems to improve energy efficiency and
endurance.
-Solar inverter: In solar power generation systems, SiC devices can
improve the efficiency of the inverter and reduce energy loss.
-High temperature and high pressure applications: Suitable for
devices that need to operate in extreme conditions, such as sensors
and electronics in the aerospace, oil and gas industries.
-LED lighting: SiC can be used to manufacture high-brightness leds
that provide higher light efficiency and longer service life.
-Power Management: For efficient power conversion and power
management systems to improve overall energy efficiency.
-Industrial equipment: In industrial equipment with high power and
high temperature environments, SiC devices can improve reliability
and performance.
FAQ:
Q: Do you support customization?
A: Yes, we do. We can customize SiC wafer according to your
requirements including material, specifications and size.
Q: What's the delivery time?
A: (1) For the standard products
For inventory: the delivery is 5 workdays after you place the
order.
For customized products: the delivery is 2 or 3 weeks after you
place the order.
(2) For the special-shaped products, the delivery is 4 workweeks
after you place the order.
