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InAs Indium Arsenide2inch 3inch 4inch Single Crystal Substrate N/P Type Semiconductor Wafer Thickness 300-800um

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    Buy cheap InAs Indium Arsenide2inch 3inch 4inch Single Crystal Substrate N/P Type Semiconductor Wafer Thickness 300-800um from wholesalers
     
    Buy cheap InAs Indium Arsenide2inch 3inch 4inch Single Crystal Substrate N/P Type Semiconductor Wafer Thickness 300-800um from wholesalers
    • Buy cheap InAs Indium Arsenide2inch 3inch 4inch Single Crystal Substrate N/P Type Semiconductor Wafer Thickness 300-800um from wholesalers
    • Buy cheap InAs Indium Arsenide2inch 3inch 4inch Single Crystal Substrate N/P Type Semiconductor Wafer Thickness 300-800um from wholesalers
    • Buy cheap InAs Indium Arsenide2inch 3inch 4inch Single Crystal Substrate N/P Type Semiconductor Wafer Thickness 300-800um from wholesalers

    InAs Indium Arsenide2inch 3inch 4inch Single Crystal Substrate N/P Type Semiconductor Wafer Thickness 300-800um

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    Brand Name : ZMSH
    Model Number : InAs wafer
    Payment Terms : T/T
    Delivery Time : 2-4 weeks
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    InAs Indium Arsenide2inch 3inch 4inch Single Crystal Substrate N/P Type Semiconductor Wafer Thickness 300-800um

    Product Description

    InAs Indium Arsenide2inch 3inch 4inch Single Crystal Substrate N/P Type Semiconductor Wafer Thickness 300-800um

    Indium InAs or indium arsenide monolithic is a semiconductor composed of indium and arsenic. It has a gray cubic crystal appearance and a melting point of 942°C. Indium arsenide is used to construct infrared detectors in the wavelength range of 1-3.8um. The detector is usually a photovoltaic photodiode. Cryocooled detectors are less noisy, but InAs detectors can also be used for high-power applications at room temperature. Indium arsenide is also used in the manufacture of diode lasers. Indium arsenide, similar to gallium arsenide, is a direct bandgap material. Indium arsenide is sometimes used with indium phosphide. Alloys with gallium arsenide to form indium arsenide - a material with a bandgap depending on the In/Ga ratio. This method is mainly similar to the alloying of indium nitride with gallium nitride to produce indium nitride. Indium arsenide is known for its high electron mobility and narrow bandgap. It is widely used as a terahertz radiation source because it is a powerful light amber emitter.

    Features

    - High electron mobility and mobility (μe/μh=70), making it an ideal material for Hall devices.
    - MBE can be grown with GaAsSb, InAsPSb, and InAsSb multi-epitaxial materials.
    - Liquid sealing method (CZ) to ensure material purity up to 99.9999% (6N).
    - All substrates are precisely polished and filled with a protective atmosphere to meet Epi-Ready requirements.
    - Crystal Orientation Selection: Other crystal orientations are available, such as (110).
    - Optical measurement techniques, such as ellipsometers, ensure that the surface on each substrate is clean.

    Technical Parameters

    crystaldopetype

    Ion carrier concentration

    cm-3

    		mobility(cm2/V.s)MPD(cm-2)SIZE
    InAsun-dopeN5*1016³2*104<5*104

    Φ2″×0.5mm

    Φ3″×0.5mm

    InAsSnN(5-20) *1017>2000<5*104

    Φ2″×0.5mm

    Φ3″×0.5mm

    InAsZnP(1-20) *1017100-300<5*104

    Φ2″×0.5mm

    Φ3″×0.5mm

    InAsSN(1-10)*1017>2000<5*104

    Φ2″×0.5mm

    Φ3″×0.5mm

    size (mm)Dia50.8x0.5mm,10×10×0.5mm,10×5×0.5mm can be customized
    raSurface roughness(Ra):<=5A
    polishsingle or doubles side polished
    package100 grade cleaning plastic bag in 1000 cleaning room

    Applications

    - Infrared optoelectronics: Indium arsenide has excellent infrared light absorption properties and is commonly used in the manufacture of infrared detectors, imagers, and lasers.
    - High-frequency electronics: Due to its high electron mobility, indium arsenide is widely used in high-frequency and high-speed electronic devices such as FETs (field-effect transistors) and HEMTs (high electron mobility transistors).
    - Quantum dots and quantum wells: In the field of quantum computing and quantum communication, indium arsenide is used to fabricate quantum dots and quantum well structures.
    - Optical communications: Indium arsenide can be used to make laser diodes and optical amplifiers in fiber optic communications to improve signal transmission efficiency.
    - Thermoelectric materials: Indium arsenide is used as a thermoelectric material in thermoelectric converters and coolers to enable energy recovery and temperature control.
    - Sensors: In the field of environmental monitoring and biomedicine, indium arsenide is used in the manufacture of various sensors to detect gases and biomolecules.

    Our services

    1. Factory direct manufacture and sell.

    2. Fast, accurate quotes.

    3. Reply to you within 24 working hours.

    4. ODM: Customized design is avaliable.

    5. Speed and precious delivery.

    FAQ

    1. Q: How to pay?
    A:100％T/T, Paypal, West Union, MoneyGram, Secure payment and Trade
    Assurance on and etc..
    2. Q: Can I customize the products based on my need?
    A: Yes, we can customize the material, specifications for your optical components
    based on your needs.
    3. Q: What's the delivery time?
    A: (1) For the standard products
    For inventory: the delivery is 5 workdays after you place the order.
    For customized products: the delivery is 2 or 3 weeks after you place the order.
    (2) For the special-shaped products, the delivery is 4 workweeks after you place the order.
    Product Tags:

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    Quality InAs Indium Arsenide2inch 3inch 4inch Single Crystal Substrate N/P Type Semiconductor Wafer Thickness 300-800um for sale

    InAs Indium Arsenide2inch 3inch 4inch Single Crystal Substrate N/P Type Semiconductor Wafer Thickness 300-800um

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