2/4/6/8 inch Sic Silicon Carbide Crystal Seed Substrate 4H-N Type
High Hardness P Grade R Grade D Grade
Silicon carbide (SiC), commonly referred to as silicon carbide, is
a compound formed by combining silicon and carbon. Silicon carbide
seed crystal is an important form, which is widely used in
semiconductor materials, ceramics, abrasives and other fields.
Silicon carbide is second only to diamond in hardness, making it an
excellent abrasive and cutting tool. Good thermal conductivity
makes it suitable for high-temperature applications such as LEDs
and power electronics. Good resistance to chemicals, especially
acids and alkalis. Good resistance to chemicals, especially acids
and alkalis. Good resistance to chemicals, especially acids and
alkalis. Due to its superior properties, silicon carbide seed
crystals have become an indispensable material in modern industry
and technology.
Features:
- High hardness: Silicon carbide is second only to diamond in hardness, making it
an excellent abrasive and cutting tool.
- High thermal conductivity: Good thermal conductivity makes it suitable for high-temperature
applications such as LEDs and power electronics.
- Corrosion resistance: Good resistance to chemicals, especially acids and alkalis.
- High temperature stability: It can still maintain good physical and chemical properties in
high temperature environment.
- Low coefficient of thermal expansion: makes it less susceptible to deformation when temperature changes,
making it suitable for precision applications.
Technical Parameter
Applications:
1. Electronics: Widely used in the manufacture of high-power and
high-frequency semiconductor devices, such as MOSFETs and diodes. 2. Abrasives and cutting tools: Used to make sandpaper, grinding
stones, and cutting tools. 3. Ceramic materials: used to produce wear-resistant,
high-temperature resistant ceramic parts. 4. Optoelectronic devices: Excellent performance in optoelectronic
applications such as LEDs and lasers. 5. Thermal management materials: used in heat sinks and thermal
interface materials to improve the heat dissipation performance of
electronic devices.
Customization:
Our SiC crystal seed substrate is RoHS certified. The minimum order
quantity is 10pc and the price is by case. The packaging details
are customized plastic boxes. The delivery time is within 30 days
and we accept T/T payment terms. Our supply ability is
1000pc/month. The SiC substrate size is 2/4/6/8 inch. Place of
origin is China.
