- The lattice constant is greater than that of silicon, which is conducive to the construction of heterostructures.

- The high electron mobility, about 3 times that of silicon, is conducive to the manufacture of high-speed electronic devices.

- The small bandgap width (0.67 eV) makes it suitable for infrared photoelectric detection and emission applications.

It is more sensitive to radiation and is suitable for radiation-sensitive electronic equipment.

The processing technology is relatively complex and the cost is high.

Technical Parameters

1. High-frequency analog and RF electronics: microwave diodes, transistors, integrated circuits; Electronic equipment in the microwave frequency band, such as radar and communications.

2. Infrared photoelectric detection and emission: infrared detector, thermal imager; Infrared emitting diodes, laser diodes.

3. Radiation Sensitive Electronic Equipment: Compound Semiconductor Heterostructure: Aerospace Avionics System; Nuclear power plants and electronic equipment in the military field.

4. Compound semiconductor heterostructure: substrate materials for III-V compounds such as GaAs, InP, etc.; Heterogeneous structure solar cells, laser diodes, etc.

Our services

1. Factory direct manufacture and sell.

2. Fast, accurate quotes.

3. Reply to you within 24 working hours.

4. ODM: Customized design is avaliable.

5. Speed and precious delivery.

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