Product Description:

6H-SiC (Hexagonal Silicon Carbide) is a wide bandgap semiconductor material with good thermal conductivity and high temperature resistance, which is widely used in high-power and high-frequency electronic devices. P-type doping is achieved by introducing elements such as aluminum (Al), which makes the material electropositive and suitable for specific electronic device designs. The bandgap is about 3.0 eV, which is suitable for operation in high-temperature and high-voltage environments. Thermal conductivity is superior to many traditional semiconductor materials and helps improve device efficiency. Mechanical Strength: Good mechanical strength, suitable for high power applications.

In the field of power electronics, it can be used to manufacture high-efficiency power devices, such as MOSFETs and IGBTs. In the field of radio frequency equipment, it has excellent performance in high-frequency applications and is widely used in communication equipment. In the field of LED technology, it can be used as a basic material for blue and ultraviolet LED devices.

Features:

· Wide band gap: The band gap is about 3.0 eV, making it suitable for high temperature, high voltage and high frequency applications.

· Excellent thermal conductivity: With good thermal conductivity, help heat dissipation, improve device performance and reliability.

· High strength and hardness: high mechanical strength, anti-fragmentation and anti-wear, suitable for use in harsh environments.

· Electron mobility: P-type doping still maintains relatively high carrier mobility, supporting efficient electronic devices.

· Optical properties: With unique optical properties, suitable for the field of optoelectronics, such as leds and lasers.

· Chemical stability: Good resistance to chemical corrosion, suitable for harsh working environments.

· Strong adaptability: can be combined with a variety of substrate materials, suitable for a variety of application scenarios.

Technical Parameters:

Applications:

· Power electronics: Used to manufacture high-efficiency power devices, such as MOSFETs and IGBTs, which are widely used in frequency converters, power management, and electric vehicles.

· RF & Microwave Equipment: Used in high-frequency amplifiers, RF power amplifiers, suitable for communication and radar systems.

· Optoelectronics: Used as a substrate in LEDs and lasers, especially in blue and ultraviolet applications.

· High Temperature Sensors: Due to their good thermal stability, they are suitable for high temperature sensors and monitoring equipment.

· Solar energy and energy systems: used in solar inverters and other renewable energy applications to improve energy conversion efficiency.

· Automotive Electronics: Performance optimization and energy saving in the power system of electric and hybrid vehicles.

· Industrial electrical equipment: Power modules for a wide range of industrial automation equipment and machines to improve energy efficiency and reliability.

Our SiC substrate is available in the 6H-P type and is RoHS certified. The minimum order quantity is 10pc and the price is by case. The packaging details are customized plastic boxes. The delivery time is within 30 days and we accept T/T payment terms. Our supply ability is 1000pc/month. The SiC substrate size is diameter 150mm thickness 350 μm . Place of origin is China.