Product Description:
4Inch Sic Silicon Carbide Wafer 6H-P Type Thickness 350μm Zero
grade Prime grade Dummy grade
6H-SiC (Hexagonal Silicon Carbide) is a wide bandgap semiconductor
material with good thermal conductivity and high temperature
resistance, which is widely used in high-power and high-frequency
electronic devices. P-type doping is achieved by introducing
elements such as aluminum (Al), which makes the material
electropositive and suitable for specific electronic device
designs. The bandgap is about 3.0 eV, which is suitable for
operation in high-temperature and high-voltage environments.
Thermal conductivity is superior to many traditional semiconductor
materials and helps improve device efficiency. Mechanical Strength:
Good mechanical strength, suitable for high power applications.
In the field of power electronics, it can be used to manufacture
high-efficiency power devices, such as MOSFETs and IGBTs. In the
field of radio frequency equipment, it has excellent performance in
high-frequency applications and is widely used in communication
equipment. In the field of LED technology, it can be used as a
basic material for blue and ultraviolet LED devices.
Features:
· Wide band gap: The band gap is about 3.0 eV, making it suitable
for high temperature, high voltage and high frequency applications.
· Excellent thermal conductivity: With good thermal conductivity,
help heat dissipation, improve device performance and reliability.
· High strength and hardness: high mechanical strength,
anti-fragmentation and anti-wear, suitable for use in harsh
environments.
· Electron mobility: P-type doping still maintains relatively high
carrier mobility, supporting efficient electronic devices.
· Optical properties: With unique optical properties, suitable for
the field of optoelectronics, such as leds and lasers.
· Chemical stability: Good resistance to chemical corrosion,
suitable for harsh working environments.
· Strong adaptability: can be combined with a variety of substrate
materials, suitable for a variety of application scenarios.
Technical Parameters:
Applications:
· Power electronics: Used to manufacture high-efficiency power
devices, such as MOSFETs and IGBTs, which are widely used in
frequency converters, power management, and electric vehicles.
· RF & Microwave Equipment: Used in high-frequency amplifiers, RF
power amplifiers, suitable for communication and radar systems.
· Optoelectronics: Used as a substrate in LEDs and lasers,
especially in blue and ultraviolet applications.
· High Temperature Sensors: Due to their good thermal stability,
they are suitable for high temperature sensors and monitoring
equipment.
· Solar energy and energy systems: used in solar inverters and other
renewable energy applications to improve energy conversion
efficiency.
· Automotive Electronics: Performance optimization and energy saving
in the power system of electric and hybrid vehicles.
· Industrial electrical equipment: Power modules for a wide range of
industrial automation equipment and machines to improve energy
efficiency and reliability.
Customization:
Our SiC substrate is available in the 6H-P type and is RoHS
certified. The minimum order quantity is 10pc and the price is by
case. The packaging details are customized plastic boxes. The
delivery time is within 30 days and we accept T/T payment terms.
Our supply ability is 1000pc/month. The SiC substrate size is
diameter 100 mm thickness 350 μm . Place of origin is China.
Our services:
1. Factory direct manufacture and sell.
2. Fast, accurate quotes.
3. Reply to you within 24 working hours.
4. ODM: Customized design is avaliable.
5. Speed and precious delivery.
