SiC Substrate, Silicon Carbide Substrate, SiC raw Substrate,
Silicon Carbide raw Substrate, Prime Grade, Dummy Grade, 4H-P SiC
Substrate, 6H-P SiC Substrate, 3C-N SiC 2inch SiC, 4inch SiC, 6inch
SiC, 8inch SiC, 12inch SiC, 4H-N, 4H-SEMI, 6H-N, HPSI type
About P-Type SiC Substrate
- support customized ones with design artwork
- a hexagonal crystal (4H SiC), made by SiC monocrystal
- high hardness, Mohs hardness reaches 9.2, second only to diamond.
- excellent thermal conductivity, suitable for high-temperature
environments.
- wide bandgap characteristics, suitable for high-frequency,
high-power electronic devices.
Description of P-Type SiC Substrate
6H-P SiC (hexagonal polycrystalline silicon carbide) is an
important semiconductor material, which is widely used in
high-temperature, high-frequency and high-power electronic devices
due to its excellent thermal stability and electrical properties.
Its unique hexagonal crystal structure enables 6H-P SiC to maintain
good conductivity and mechanical strength under extreme conditions.
It has a band gap of about 3.0 electron volts, a high breakdown
voltage and excellent thermal conductivity, so it shows great
application potential in power electronic devices, solar cells and
LEDs.
Compared with N-type SiC, 6H-P SiC has obvious differences in
doping type and conductivity mechanism. N-type SiC increases its
conductivity by adding electron donors (such as nitrogen or
phosphorus) to increase the carrier concentration. In contrast, the
carrier type and concentration of 6H-P SiC depend on the selection
and distribution of its doping elements. N-type SiC usually has
higher electron mobility and lower resistivity, which makes it
perform well in high-frequency applications, while 6H-P SiC can
maintain stability under high temperature and high power
environments due to its structural characteristics, making it
suitable for applications such as power electronics and
high-temperature sensors.
The production process of 6H-P SiC is relatively mature, and it is
mainly prepared by chemical vapor deposition (CVD) and melt growth.
Due to its excellent mechanical strength and corrosion resistance,
6H-P SiC is considered to be an ideal choice to replace traditional
silicon materials, especially for applications in harsh
environments.
With the increasing demand for high-efficiency devices, the
research and development of 6H-P SiC is constantly advancing, and
it is expected to play a greater role in new energy vehicles, smart
grids, and radio frequency devices in the future. Both have their
own advantages, and the choice needs to be comprehensively
considered according to the specific application requirements.
Details of P-Type SiC Substrate
Propery | P-type 4H-SiC, Single Crystal | P-type 6H-SiC, Single Crystal |
| Lattice Parameters | a=3.082 Å c=10.092 Å | a=3.09 Å c=15.084 Å |
| Stacking Sequence | ABCB | ACBABC |
| Mohs Hardness | ≈9.2 | ≈9.2 |
| Density | 3.23 g/cm3 | 3.0 g/cm3 |
| Therm. Expansion Coefficient | 4.3×10-6/K(⊥Caxis) 4.7×10-6/K( ∥Caxis) | 4.3×10-6/K(⊥Caxis) 4.7×10-6/K( ∥Caxis) |
| Refraction Index @750nm | no = 2.621 ne = 2.671 | no=2.612 ne=2.651 |
| Dielectrc Constant | c~9.66 | c~9.66 |
Thermal Conductivity |
3-5 W/cm·K@298K |
3-5 W/cm·K@298K |
| Band-Gap | 3.26 eV | 3.02 eV |
| Break-Down Electrical Field | 2-5×106V/cm | 2-5×106V/cm |
Saturation Drift Velocity | 2.0×105m/s | 2.0×105m/s |
Samples of P-Type SiC Substrate
About us
Our enterprise, ZMSH, specialises in the research, production,
processing, and sales of Semiconductor substrates and optical
crystal materials.
We have an experienced engineering team, management expertise,
precision processing equipment, and testing instruments, providing
us with extremely strong capabilities in processing non-standard
products.
We can research, develop, and design various new products according
to customer needs.
The company will adhere to the principle of "customer-centred,
quality-based" and strive to become a top-tier high-tech enterprise
in the field of optoelectronic materials.
Similar product recommendations
1.
4H-SEMI Silicon Carbide SiC
Substrate 2 Inch Thickness 350um 500um P Grade D Grade SiC
Wafer
2. 2"
3" FZ SiO2 Single Crystal IC Chips 100um 200um Dry Wet Oxidation
Layer 100nm 300nm
FAQ
1. Q: Compared with N-Type, how about the P-Type?
A: P-Type 4H-SiC substrates, doped with trivalent elements like
aluminum, have holes as the majority carriers, providing good
conductivity and stability at high temperatures. In contrast,
N-Type substrates, doped with pentavalent elements like phosphorus,
have electrons as the majority carriers, which typically results in
higher electron mobility and lower resistivity.
2. Q: What is the market outlook for P-Type SiC?
A: The market outlook for P-Type SiC is highly positive, driven by
increasing demand for high-performance power electronics in
electric vehicles, renewable energy systems, and advanced
industrial applications.
