SiC Substrate, Silicon Carbide Substrate, SiC raw Substrate,
Silicon Carbide raw Substrate, Prime Grade, Dummy Grade, 4H-P SiC
Substrate, 6H-P SiC Substrate, 3C-N SiC 2inch SiC, 4inch SiC, 6inch
SiC, 8inch SiC, 12inch SiC, 4H-N, 4H-SEMI, 6H-N, HPSI type
About P-Type SiC Substrate
- support customized ones with design artwork
- a hexagonal crystal (4H SiC), made by SiC monocrystal
- high hardness, Mohs hardness reaches 9.2, second only to diamond.
- excellent thermal conductivity, suitable for high-temperature
environments.
- wide bandgap characteristics, suitable for high-frequency,
high-power electronic devices.
Description of P-Type SiC Substrate
P-type SiC substrate is an important semiconductor material widely
used in high-power and high-frequency electronic devices. By doping
trivalent elements (such as aluminium or gallium), the P-type SiC
substrate forms P-type characteristics, which enables the material
to provide good electrical conductivity and high carrier
concentration. Its excellent thermal conductivity and high
breakdown voltage enable it to maintain stable performance under
extreme conditions.
P-type SiC substrate has excellent high-temperature stability and
radiation resistance and can work normally in high-temperature
environments. Compared with traditional silicon materials, 4H-SiC
substrates show lower energy loss under high electric fields and
are suitable for use in electric vehicles, renewable energy, and
power conversion. In addition, excellent thermal conductivity helps
to improve the heat dissipation efficiency of the device and extend
its service life.
P-type SiC substrates are widely used in power devices, RF devices,
and optoelectronic devices.
They are often used to manufacture devices such as P-type MOSFETs
and IGBTs to meet the needs of high voltage, high temperature, and
high frequency. In addition, with the development of technology,
4H-P type SiC substrates will play an increasingly important role
in future power electronics and smart grids.
Details of P-Type SiC Substrate
Propery | P-type 4H-SiC, Single Crystal | P-type 6H-SiC, Single Crystal |
| Lattice Parameters | a=3.082 Å c=10.092 Å | a=3.09 Å c=15.084 Å |
| Stacking Sequence | ABCB | ACBABC |
| Mohs Hardness | ≈9.2 | ≈9.2 |
| Density | 3.23 g/cm3 | 3.0 g/cm3 |
| Therm. Expansion Coefficient | 4.3×10-6/K(⊥Caxis) 4.7×10-6/K( ∥Caxis) | 4.3×10-6/K(⊥Caxis) 4.7×10-6/K( ∥Caxis) |
| Refraction Index @750nm | no = 2.621 ne = 2.671 | no=2.612 ne=2.651 |
| Dielectrc Constant | c~9.66 | c~9.66 |
Thermal Conductivity |
3-5 W/cm·K@298K |
3-5 W/cm·K@298K |
| Band-Gap | 3.26 eV | 3.02 eV |
| Break-Down Electrical Field | 2-5×106V/cm | 2-5×106V/cm |
Saturation Drift Velocity | 2.0×105m/s | 2.0×105m/s |
Samples of P-Type SiC Substrate
About us
Our enterprise, ZMSH, specialises in the research, production,
processing, and sales of Semiconductor substrates and optical
crystal materials.
We have an experienced engineering team, management expertise,
precision processing equipment, and testing instruments, providing
us with extremely strong capabilities in processing non-standard
products.
We can research, develop, and design various new products according
to customer needs.
The company will adhere to the principle of "customer-centred,
quality-based" and strive to become a top-tier high-tech enterprise
in the field of optoelectronic materials.
Similar product recommendations
1.
4H-SEMI Silicon Carbide SiC
Substrate 2 Inch Thickness 350um 500um P Grade D Grade SiC
Wafer
2. 2"
3" FZ SiO2 Single Crystal IC Chips 100um 200um Dry Wet Oxidation
Layer 100nm 300nm
FAQ
1. Q: Compared with N-Type, how about the P-Type?
A: P-Type 4H-SiC substrates, doped with trivalent elements like
aluminum, have holes as the majority carriers, providing good
conductivity and stability at high temperatures. In contrast,
N-Type substrates, doped with pentavalent elements like phosphorus,
have electrons as the majority carriers, which typically results in
higher electron mobility and lower resistivity.
2. Q: What is the market outlook for P-Type SiC?
A: The market outlook for P-Type SiC is highly positive, driven by
increasing demand for high-performance power electronics in
electric vehicles, renewable energy systems, and advanced
industrial applications.
