SiC wafer, Silicon Carbide Wafer, SiC Substrate, Silicon Carbide
Substrate, P Grade, D Grade, 2inch SiC, 4inch SiC, 6inch SiC, 8inch
SiC, 12inch SiC, 4H-N, 4H-SEMI, 6H-N, HPSI type
About 4H-N SiC
- support customized ones with design artwork
- a hexagonal crystal (4H SiC), made by SiC monocrystal
- High hardness, Mohs hardness reaches 9.2, second only to diamond.
- excellent thermal conductivity, suitable for high-temperature
environments.
- wide bandgap characteristics, suitable for high-frequency,
high-power electronic devices.
Description of 4H-N SiC
Silicon carbide (SiC) wafers are a semiconductor material with
unique physical and chemical properties.
They have attracted much attention for their high breakdown
electric field strength, high electron mobility and excellent
thermal conductivity.
SiC is widely used in electric vehicles, renewable energy, RF
devices and power electronic devices, and plays an important role
in the production of power MOSFETs, Schottky diodes and other
fields.
Of course, in the field of electric vehicles, SiC devices can
significantly improve power conversion efficiency and driving
range, and SiC inverters in renewable energy systems help improve
energy conversion efficiency and system reliability.
In addition, SiC wafers can increase the switching speed and
operating frequency of devices in RF applications, promoting the
development of high-frequency electronic components.
Although the current manufacturing cost is high, mainly due to the
complexity of material preparation and processing, with the
continuous advancement of technology and improvement of processes,
the cost is gradually decreasing.
SiC wafers not only promote the miniaturization and efficiency of
electronic devices but also bring new development opportunities for
future energy conversion and electric vehicle technology. Its
market prospects and technical potential are very broad.
With the maturity of manufacturing technology and the expansion of
application scope, silicon carbide wafers will be widely used in
more fields and become an important driving force for the
development of next-generation electronic devices.
ZMSH has been deeply involved in the SiC field for many years,
providing a variety of SiC products to global customers, focusing
on customer service and product quality, and striving to become a
top-tier high-tech enterprise in the field of optoelectronic
materials.
Details of 4H-N SiC
Each type of SiC wafer has its own physical details.
*Here is the 2inch 4H-N type.
| 2-inch Diameter 4H N-type Silicon Carbide Substrate Specification |
| SUBSTRATE PROPERTY | Production Grade | Dummy Grade |
| Diameter | 50.8 mm ± 0.38 mm |
| Surface Orientation | on-axis: {0001} ± 0.2°; |
| off-axis: 4° toward <11-20> ± 0.5° |
| Primary Flat Orientation | <11-20> ± 5.0˚ |
| Secondary Flat Orientation | 90.0˚ CW from Primary ± 5.0˚, silicon face up |
| Primary Flat Length | 16.0 mm ± 1.65 mm |
| Secondary Flat Length | 8.0 mm ± 1.65 mm |
| Wafer Edge | Chamfer |
| Micropipe Density | ≤5 micropipes/cm2 | ≤50 micropipes/cm2 |
| Polytype Areas by High-Intensity Light | None permitted | ≤10% area |
| Resistivity | 0.015~0.028Ω·cm | (area 75%) |
| 0.015~0.028Ω·cm |
| Thickness | 350.0 μm ± 25.0 μm or 500.0 μm ± 25.0 μm |
| TTV | ≤10 μm | ≤15 μm |
| BOW | ≤10 μm | ≤15 μm |
| Warp | ≤25 μm |
| Surface Finish | Double Side Polish, Si Face CMP (chemical polishing) |
| Surface Roughness | CMP Si Face Ra≤0.5 nm | N/A |
| Cracks by High-Intensity Light | None permitted |
| Edge Chips/Indents by Diffuse Lighting | None permitted | Qty.2 <1.0 mm width and depth |
| Total Usable Area | ≥90% | N/A |
| Note: Customized specifications other than the above parameters are
acceptable. |
More samples of 4H-N SiC
*Please feel free to contact us if you have further requirements.
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FAQ
1. Q: Does 4H-N SiC need to be replaced frequently?
A: No, 4H-N SiC does not need to be replaced frequently due to its
exceptional durability, thermal stability, and resistance to wear
and tear.
2. Q: Can the colour of 4h-n sic be changed?
A: Yes, but therefore, while colour modification is possible, it
requires careful consideration of how it may affect the material's
performance.
