SiC wafer, Silicon Carbide Wafer, SiC Substrate, Silicon Carbide
Substrate, P Grade, D Grade, 2inch SiC, 4inch SiC, 6inch SiC, 8inch
SiC, 12inch SiC, 4H-N, 4H-SEMI, 6H-N, HPSI type
Character of 4H-N SiC
- use SIC Monocrystal to manufacture
- customization is allowed by design drawings
- high performance, high resistivity and low leakage currents
- 9.2 Mohs high hardness, just behind diamond
- widely used in high-tech areas, like power electronics, LEDs and
sensors
Brief introduction of 4H-N SiC
Silicon carbide (SiC) is a semiconductor material made of silicon
and carbon.
It has excellent hardness and strength, making it very durable.
SiC is known for its excellent thermal conductivity, which allows
it to efficiently dissipate heat, making it ideal for high-power
and high-temperature applications.
One of its main properties is a wide bandgap, which enables devices
to operate at higher voltages, temperatures, and frequencies than
silicon.
SiC also has high electron mobility, which helps enable faster and
more efficient electronic devices.
Its chemical stability and resistance to oxidation make it ideal
for harsh environments.
SiC is widely used in power electronics, where efficiency and
durability are critical, as well as high-frequency devices, LEDs,
and as a substrate for the growth of other semiconductor materials
such as gallium nitride (GaN).
Its properties make it a valuable material in advanced electronic
applications.
More details about 4H-N SiC
*More details will be shown in the following table.
| 6-inch Diameter 4H N-type Silicon Carbide Substrate Specification |
| SUBSTRATE PROPERTY | Production Grade | Dummy Grade |
| Diameter | 150 mm ± 0.1 mm |
| Surface Orientation | off-axis: 4° toward <11-20> ± 0.5° |
| Primary Flat Orientation | <1-100> ± 5.0˚ |
| Primary Flat Length | 47.5 mm ± 2.0 mm |
| Resistivity | 0.015~0.028Ω·cm | ≤0.1Ω·cm |
| Thickness | 350.0 μm ± 25.0 μm or 500.0 μm ± 25.0 μm |
| TTV | ≤15 μm | ≤25 μm |
| BOW | ≤30 μm | ≤50 μm |
| Warp | ≤40 μm | ≤60 μm |
| Surface Finish | Double Side Polish, Si Face CMP (chemical polishing) |
| Surface Roughness | CMP Si Face Ra≤0.5 nm, C Face Ra≤1 nm | N/A |
| Note: Customerized specifications other than the above parameters
are acceptable. |
Other samples of 4H-N SiC
*If you have further requirements, we can manufacture the
customized ones.
Products recommend
1.SiC Substrate 4H-N Thickness 350um Used In Optoelectronics
Semiconductor Material
2.2Inch Sapphire Wafer Al2O3 monocrystalline Dia 50.80mm
Thickness 430um BOW ＜10 A-plane
FAQ
1. Q: Where can you use 6-inch 4H-N SiC?
A: There are many areas of application, such as MOSFET, IGBT and
diode, suitable for high-power, high-efficiency applications such
as electric vehicles, power converters and smart grids.
2. Q: How does 4H-N SiC contribute to renewable energy?
A: 4H-N SiC-based power electronics improve the efficiency and
reliability of renewable energy systems like solar inverters and
wind turbines, enabling better energy conversion and management
