SiC wafer, Silicon Carbide Wafer, SiC Substrate, Silicon Carbide
Substrate, P Grade, D Grade, 2inch SiC, 4inch SiC, 6inch SiC, 8inch
SiC, 12inch SiC, 4H-N, 4H-SEMI, 6H-N, HPSI type
About 4H-SEMI SiC
- use SIC Monocrystal to make
- support customized ones with design artwork
- high-quality, suitable for high-performance applications
- high hardness, about 9.2 Mohs
- widely used in high-tech areas, like power electronics, automotive
electronics and RF devices
Description of 4H-SEMI SiC
Silicon Carbide (SiC) is a versatile semiconductor renowned for its
performance in high-power and high-frequency applications.
Its wide bandgap enables efficient operation at high voltages and
temperatures, making it suitable for power electronics, RF devices,
and harsh environments.
SiC is integral to industries such as automotive and energy due to
its reliability and efficiency.
Advanced manufacturing methods, like Chemical Vapor Deposition
(CVD) and Physical Vapor Transport (PVT), ensure high-quality,
durable components.
SiC's unique properties also make it ideal for short-wavelength
optoelectronics, high-temperature environments, radiation
resistance, and demanding electronic systems.
ZMSH offers a range of SiC wafers, including 6H and 4H types, no
matter N type, SEMI type or HPSI type, ensuring high quality,
stable supply, and cost-effectiveness through large-scale
production processes.
Features of 4H-SEMI SiC
| 4-inch Diameter 4H Semi-insulating Silicon Carbide Substrate
Specification |
| SUBSTRATE PROPERTY | Production Grade | Dummy Grade |
| Diameter | 50.8.0 mm +0.0/-0.38 mm |
| Surface Orientation | on-axis: {0001} ± 0.2° |
| Primary Flat Orientation | <11-20> ± 5.0˚ |
| Secondary Flat Orientation | 90.0˚ CW from Primary ± 5.0˚, silicon face up |
| Primary Flat Length | 32.5 mm ± 2.0 mm |
| Secondary Flat Length | 18.0 mm ± 2.0 mm |
| Wafer Edge | Chamfer |
| Micropipe Density | ≤5 micropipes/cm2 | ≤50 micropipes/cm2 |
| Polytype Areas by High-Intensity Light | None permitted | ≤10% area |
| Resistivity | 0.015~0.028Ω·cm | (area 75%) |
| 0.015~0.028Ω·cm |
| Thickness | 350.0 μm ± 25.0 μm or 500.0 μm ± 25.0 μm |
| TTV | ≤10 μm | ≤15 μm |
| BOW (absolute value) | ≤25 μm | ≤30 μm |
| Warp | ≤45 μm |
| Surface Finish | Double Side Polish, Si Face CMP (chemical polishing) |
| Surface Roughness | CMP Si Face Ra≤0.5 nm | N/A |
| Cracks by high-intensity light | None permitted |
| Edge Chips/Indents by Diffuse Lighting | None permitted | Qty.2 <1.0 mm width and depth |
| Total Usable Area | ≥90% | N/A |
| Note: Customerized specifications other than the above parameters
are acceptable. |
More samples of 4H-SEMI SiC
*Please feel free to contact us if you have customized demands.
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FAQ
1. Q: How does 4H-SiC Semi ensure the quality of its wafers?
A: 4H-SiC Semi employs advanced manufacturing techniques, including
Chemical Vapor Deposition (CVD) and Physical Vapor Transport (PVT),
and follows stringent quality control processes to ensure
high-quality wafers.
2. Q: What's the main difference between 4H-N SiC and 4H-SEMI SiC
A: The primary difference between 4H-N SiC and 4H-SEMI SiC is that
4H-N SiC (Nitrogen-doped) is n-type semiconductor silicon carbide,
whereas 4H-Semi SiC is semi-insulating silicon carbide, which has
been processed to have very high resistivity.
