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4Inch 4H-N Silicon Carbide SiC Substrate Dia 100mm N type Prime Grade Dummy Grade Thickness 350um Customized

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    Buy cheap 4Inch 4H-N Silicon Carbide SiC Substrate Dia 100mm N type Prime Grade Dummy Grade Thickness 350um Customized from wholesalers
     
    Buy cheap 4Inch 4H-N Silicon Carbide SiC Substrate Dia 100mm N type Prime Grade Dummy Grade Thickness 350um Customized from wholesalers
    • Buy cheap 4Inch 4H-N Silicon Carbide SiC Substrate Dia 100mm N type Prime Grade Dummy Grade Thickness 350um Customized from wholesalers
    • Buy cheap 4Inch 4H-N Silicon Carbide SiC Substrate Dia 100mm N type Prime Grade Dummy Grade Thickness 350um Customized from wholesalers
    • Buy cheap 4Inch 4H-N Silicon Carbide SiC Substrate Dia 100mm N type Prime Grade Dummy Grade Thickness 350um Customized from wholesalers
    • Buy cheap 4Inch 4H-N Silicon Carbide SiC Substrate Dia 100mm N type Prime Grade Dummy Grade Thickness 350um Customized from wholesalers

    4Inch 4H-N Silicon Carbide SiC Substrate Dia 100mm N type Prime Grade Dummy Grade Thickness 350um Customized

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    Brand Name : ZMSH
    Model Number : SiC Substrate
    Payment Terms : T/T
    Delivery Time : 2-4 weeks
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    4Inch 4H-N Silicon Carbide SiC Substrate Dia 100mm N type Prime Grade Dummy Grade Thickness 350um Customized

    SiC wafer, Silicon Carbide Wafer, SiC Substrate, Silicon Carbide Substrate, P Grade, D Grade, 2inch SiC, 4inch SiC, 6inch SiC, 8inch SiC, 12inch SiC, 4H-N, 4H-SEMI, 6H-N, HPSI type


    Features of 4H-N SiC


    - Use SiC Monocrystal to manufacture


    - Support customized ones with design artwork


    - Exceptional performance, wide bandgap and high electron mobility


    - Superior Hardness, 9.2 Mohs scale for scratch resistance


    - Widely used in technology sectors such as power electronics, LEDs, and sensors.


    About 4H-N SiC

    SiC substrate refers to a wafer made of silicon carbide (SiC), which is a wide-bandgap semiconductor material that has excellent electrical and thermal properties.

    SiC substrates are commonly used as a platform for the growth of epitaxial layers of SiC or other materials, which can be used to fabricate various electronic and optoelectronic devices, such as high-power transistors, Schottky diodes, UV photodetectors, and LEDs.


    SiC substrates are preferred over other semiconductor materials, such as silicon, for high-power and high-temperature electronics applications due to their superior properties, including higher breakdown voltage, higher thermal conductivity, and higher maximum operating temperature.

    SiC devices can operate at much higher temperatures than silicon-based devices, making them suitable for use in extreme environments, such as in automotive, aerospace, and energy applications.


    *Further details are following:

    GradeProduction GradeDummy Grade
    Diameter150.0 mm +/- 0.2 mm
    Thickness500 um +/- 25 um for 4H-SI350 um +/- 25 um for 4H-N
    Wafer OrientationOn axis: <0001> +/- 0.5 deg for 4H-SIOff axis: 4.0 deg toward <11-20> +/-0.5 deg for 4H-N
    Micropipe Density (MPD)5 cm-230 cm-2
    Doping ConcentrationN-type: ~ 1E18/cm3SI-type (V-doped): ~ 5E18/cm3
    Primary Flat (N-type){10-10} +/- 5.0 deg
    Primary Flat Length (N-type)47.5 mm +/- 2.0 mm
    Notch (Semi-Insulating type)Notch
    Edge exclusion3 mm
    TTV /Bow /Warp15um /40um /60um
    Surface RoughnessPolish Ra 1 nm
    CMP Ra 0.5 nm on the Si face


    More samples

    *We also accept customization if you have furthermore needs.

    Other SiC products recommend

    1. Silicon Carbide Wafer 2inch 4inch 6inch 8inch Industrial Use With Surface Roughness ≤0.2nm

    4Inch 4H-N Silicon Carbide SiC Substrate Dia 100mm N type Prime Grade Dummy Grade Thickness 350um Customized


    2. 2sp 4H-SEMI 4H-N SIC Silicon Carbide Wafer 10 X 10 X 0.5mm

    4Inch 4H-N Silicon Carbide SiC Substrate Dia 100mm N type Prime Grade Dummy Grade Thickness 350um Customized


    FAQ about 4H-N SiC

    1. Q: What is the difference between 4H-N SiC and 4H-Semi SiC

    A: 4H-N SiC is a high-purity, undoped silicon carbide with superior electrical performance suited for high-power and high-frequency applications,

    while 4H-Semi SiC is semi-insulating with varying doping levels, designed for applications needing electrical insulation.


    2. Q: How does the thermal conductivity of 4H-N SiC compare to other semiconductors?
    A: 4H-N SiC has higher thermal conductivity than many other semiconductors, which helps in better heat dissipation and thermal management.

    Quality 4Inch 4H-N Silicon Carbide SiC Substrate Dia 100mm N type Prime Grade Dummy Grade Thickness 350um Customized for sale
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