SiC wafer, Silicon Carbide Wafer, SiC Substrate, Silicon Carbide
Substrate, P Grade, D Grade, 2inch SiC, 4inch SiC, 6inch SiC, 8inch
SiC, 12inch SiC, 4H-N, 4H-SEMI, 6H-N, HPSI type
Character of 4H-N SiC
- use SIC Monocrystal to make
- support customized ones with design artwork
- high performance, wide bandgap, high electron mobility
- high hardness, about 9.2 Mohs
- widely used in high-tech areas, like power electronics, LEDs and
sensors
Silicon carbide (SiC) wafers, composed of silicon and carbon, are a
crucial semiconductor material utilized in various applications.
Known for their distinctive electrical and thermal properties, SiC
wafers play an essential role in the semiconductor industry.
They are especially advantageous in high-temperature environments
and offer several benefits over conventional silicon wafers.
*Product specification sheet is below.
| Property | P grade | D grade |
| Crystal Form | 4H-N |
| Polytype | None Permitted | Area≤5% |
| (MPD)a | ≤1/cm2 | ≤5/cm2 |
| Hex Plates | None Permitted | Area≤5% |
| Hexagonal Polycrystal | None Permitted |
| Inclusions | Area≤0.05% | N/A |
| Resistivity | 0.015Ω•cm—0.028Ω•cm | 0.014Ω•cm—0.028Ω•cm |
| (EPD)a | ≤8000/cm2 | N/A |
| (TED)a | ≤6000/cm2 | N/A |
| (BPD)a | ≤2000/cm2 | N/A |
| (TSD)a | ≤1000/cm2 | N/A |
| Stacking Fault | ≤1% Area | N/A |
| Surface Metal Contamination | (Al, Cr, Fe, Ni, Cu, Zn, Pb, Na, K, Ti, Ca, V, Mn) ≤1E11cm-2 |
More details of 4H-N SiC
The silicon carbide (SiC) industrial chain consists of several key
stages: substrate material preparation, epitaxial layer growth,
device manufacturing, and downstream applications.
SiC monocrystals are typically produced using the physical vapour
transmission (PVT) method.
These crystals then serve as substrates for the chemical vapour
deposition (CVD) process, which creates epitaxial layers.
These layers are subsequently used to manufacture various devices.
In the SiC device industry, the majority of the value is
concentrated in the upstream substrate manufacturing stage due to
its technical complexity.
ZMSH company offers SiC wafers in sizes 2inch, 4inch, 6inch, 8inch
and 12inch.
If you have other size requirements, we can customize them. (please
tell us the specific parameters)
Due to its exceptional hardness (SiC is the second hardest material
globally) and stability under high temperatures and voltage,
SiC is extensively utilized across multiple industries.
Samples
*We can customize it if you have further requirements.
About us
We have an experienced engineering team, management expertise,
precision processing equipment, and testing instruments, providing
us with extremely strong capabilities in processing non-standard
products.
We can research, develop, and design various new products according
to customer needs.
The company will adhere to the principle of "customer-centred,
quality-based" and strive to become a top-tier high-tech enterprise
in the field of optoelectronic materials.
*when we manufacture the SiC
Products Recommend
1. 2Inch
Sic Substrate 6H-N Type Thickness 350um,650um Sic Wafer
2.6" High
Purity Silicon 4H-Semi SIC Dummy Grade Semiconductor Wafers LED 5G
D Grade
FAQ
1. Q: How does 4H-N SiC compare to silicon?
A: 4H-N SiC has a wider bandgap, higher thermal conductivity, and
better breakdown voltage compared to silicon.
2. Q: What is the future outlook for 4H-N SiC technology?
A: The future outlook for 4H-N SiC technology is promising, with
increasing demand in power electronics, renewable energy, and
advanced electronic systems.
