The 6H n-type Silicon Carbide (SiC) single-crystal substrate is an
essential semiconductor material extensively used in high-power,
high-frequency, and high-temperature electronic applications.
Renowned for its hexagonal crystal structure, 6H-N SiC offers a
wide bandgap and high thermal conductivity, making it ideal for
demanding environments.
This material's high breakdown electric field and electron mobility
enable the development of efficient power electronic devices, such
as MOSFETs and IGBTs, that can operate at higher voltages and
temperatures than those made from traditional silicon. Its
excellent thermal conductivity ensures effective heat dissipation,
critical for maintaining performance and reliability in high-power
applications.
In radiofrequency (RF) applications, 6H-N SiC's properties support
the creation of devices capable of operating at higher frequencies
with improved efficiency. Its chemical stability and resistance to
radiation also make it suitable for use in harsh environments,
including aerospace and defense sectors.
Furthermore, 6H-N SiC substrates are integral to optoelectronic
devices, such as ultraviolet photodetectors, where their wide
bandgap allows for efficient UV light detection. The combination of
these properties makes 6H n-type SiC a versatile and indispensable
material in advancing modern electronic and optoelectronic
technologies.
SiC wafer Features:
- Product Name: SiC Substrate
- Hexagonal Structure: Unique electronic properties.
- High Electron Mobility: ~600 cm²/V·s.
- Chemical Stability: Resistant to corrosion.
- Radiation Resistance: Suitable for harsh environments.
- Low Intrinsic Carrier Concentration: Efficient at high temperatures.
- Durability: Strong mechanical properties.
- Optoelectronic Capability: Effective UV light detection.
SiC wafer Technical Parameters:
| Property | 4H-SiC, Single Crystal | 6H-SiC, Single Crystal |
| Lattice Parameters | a=3.076 Å c=10.053 Å | a=3.073 Å c=15.117 Å |
| Stacking Sequence | ABCB | ABCACB |
| Mohs Hardness | ≈9.2 | ≈9.2 |
| Density | 3.21 g/cm3 | 3.21 g/cm3 |
| Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K |
| Refraction Index @750nm | no = 2.61 | no = 2.60 |
| ne = 2.66 | ne = 2.65 |
| Dielectric Constant | c~9.66 | c~9.66 |
Thermal Conductivity (N-type, 0.02 ohm.cm) | a~4.2 W/cm·K@298K | |
| c~3.7 W/cm·K@298K | |
Thermal Conductivity (Semi-insulating) | a~4.9 W/cm·K@298K | a~4.6 W/cm·K@298K |
| c~3.9 W/cm·K@298K | c~3.2 W/cm·K@298K |
| Band-gap | 3.23 eV | 3.02 eV |
| Break-Down Electrical Field | 3-5×106V/cm | 3-5×106V/cm |
| Saturation Drift Velocity | 2.0×105m/s | 2.0×105m/s |
SiC wafer Applications:
SiC (Silicon Carbide) substrates are used in various
high-performance applications due to their unique properties such
as high thermal conductivity, high electric field strength, and
wide bandgap. Here are some applications:
SiC wafer Customization:
We can customize the size of the SiC substrate to meet your
specific requirements. We also offer a 4H-Semi HPSI SiC wafer with
a size of 10x10mm or 5x5 mm.
The price is determined by the case, and the packaging details can
be customized to your preference.
Delivery time is within 2-4 weeks. We accept payment through T/T.
SiC wafer Support and Services:
Our SiC Substrate product comes with comprehensive technical
support and services to ensure optimal performance and customer
satisfaction.
Our team of experts is available to assist with product selection,
installation, and troubleshooting.
We offer training and education on the use and maintenance of our
products to help our customers maximize their investment.
Additionally, we provide ongoing product updates and enhancements
to ensure our customers always have access to the latest
technology.
SiC wafer FAQ:
Q: Can 2-inch 6H-N SiC substrates be used for all types of
semiconductor devices?
A: While 2-inch 6H-N SiC substrates are versatile, they are
particularly well-suited for high-power and high-frequency devices.
They may not be ideal for all types of semiconductor devices,
especially those not requiring the unique properties of SiC.
Q: What are the typical dimensions and specificationsfor a 2-inch
6H-N SiC substrate?
A: Typical dimensions include a diameter of 2 inches (50.8 mm),
thickness around 300-500 micrometers, and specific surface quality
and flatness requirements.
The exact specifications can vary depending on the manufacturer and
intended application.
Q: How do you handle and store 2-inch 6H-N SiC substrates?
A: Due to their brittleness, SiC substrates should be handled with
care using cleanroom gloves and proper handling tools.
They should be stored in a controlled environment to avoid
contamination and damage.
