SiC seed wafer 4H N type Dia 153 155 2inch-12inch customized Used
for manufacturing MOSFETs
Silicon Carbide (SiC) seed crystal wafers serve as fundamental
materials in the semiconductor industry. Manufactured from
high-purity silicon carbide (SiC) raw materials through Physical
Vapor Transport (PVT) or High-Temperature Chemical Vapor Deposition
(HTCVD) processes, our company specializes in supplying 2-12 inch
SiC seed crystal wafers with various diameter specifications
(Dia153, 155, 203, 205, 208) to meet diverse customer requirements.
Equipped with state-of-the-art SiC seed crystal wafer production
facilities, ZMSH possess comprehensive capabilities encompassing
crystal growth, cutting, grinding, and polishing processes,
enabling us to provide high-precision customization services.
Moving forward, we will continue to optimize manufacturing
processes for large-size (8-12 inch) SiC seed crystal wafers while
enhancing crystal quality and yield rates to facilitate their
applications in high-end markets including power electronics, RF
devices, and new energy vehicles.
Key Features of SiC seed wafers
• Exceptional Thermal Conductivity (490W/m·K): SiC seed crystal wafers exhibit superior heat dissipation
performance, making them ideal for high-power devices.
• Wide Bandgap (3.2eV): SiC seed crystal wafers demonstrate high voltage and temperature
resistance, with operational capabilities exceeding 600°C.
• Excellent Chemical Stability: SiC seed crystal wafers offer remarkable corrosion resistance for
harsh environment applications.
• Low Defect Density (EPD < 10³/cm²): The high crystal quality ensures stable device performance.
• Outstanding Mechanical Strength: With hardness approaching diamond, the wafers provide excellent
wear and impact resistance.
Technical specifications of SiC seed wafers
| Silicon carbide seed wafer |
| Polytype | 4H |
| Surface orientation error | 4°toward<11-20>±0.5º |
| Resistivity | customization |
| Diameter | 205±0.5mm |
| Thickness | 600±50μm |
| Roughness | CMP,Ra≤0.2nm |
| Micropipe Density | ≤1 ea/cm2 |
| Scratches | ≤5,Total Length≤2*Diameter |
| Edge chips/indents | None |
| Front laser marking | None |
| Scratches | ≤2,Total Length≤Diameter |
| Edge chips/indents | None |
| Polytype areas | None |
| Back laser marking | 1mm (from top edge) |
| Edge | Chamfer |
| Packaging | Multi-wafer cassette |
Primary applications of SiC seed wafers
• Power Semiconductors: SiC seed crystal wafers are used in manufacturing high-efficiency
power devices such as MOSFETs and SBDs.
• RF Devices: SiC seed crystal wafers are suitable for high-frequency
applications including 5G base stations and radar systems.
• New Energy Vehicles: SiC seed crystal wafers applied in critical components like
electric drive systems and onboard chargers.
• Photovoltaic Inverters: SiC seed crystal wafers enhance energy conversion efficiency while
reducing power losses.
• Aerospace: SiC seed crystal wafers are capable of withstanding extreme
temperatures and radiation for electronic equipment in harsh
environments.
Related products
ZMSH leverages proprietary manufacturing technologies to deliver
comprehensive end-to-end services from crystal growth to precision
processing, including customized wafer sizing (2-12 inch), diameter
specifications (Dia153/155/203/205/208), and tailored surface
finishes. Our SiC seed crystal wafers meet international advanced
standards in crystal purity, defect control, and dimensional
accuracy, fulfilling the demands of high-end applications in power
electronics, RF communications, and new energy sectors. With robust
production capacity and flexible supply chain solutions, we ensure
reliable volume supply while maintaining stringent quality control
throughout the entire manufacturing and delivery process. Our
technical team provides full-process support from product selection
to after-sales service, helping customers optimize their
semiconductor solutions.
SiC substrates 4H-N/SEMI type:
Q&A
