Sapphire Wafer Off C-axis toward M-Plane 20° Al₂O₃ Diameter 2"/3"/4"/6"/8", Custom Orientation
This ultra-high-purity sapphire wafer features off C-axis toward
M-Plane 20° orientation with 99.999% (5N) Al₂O₃ purity, engineered for advanced
epitaxial growth and specialized semiconductor applications.
Available in standard diameters (2" to 8") with customizable
orientations and thicknesses, it delivers exceptional
crystallographic precision, ultra-low defect density, and superior
thermal/chemical stability. The 1° off-cut toward the M-axis
optimizes epitaxial film quality for GaN, AlN, and ZnO-based
devices, making it ideal for high-performance LEDs, laser diodes,
power electronics, and SAW/BAW filters.
Key Features of Sapphire Wafer
Precision Off-Cut Orientation:
20° off from C-axis toward M-Plane , reducing step-bunching defects and improving epitaxial layer
uniformity.
Custom off-cut angles (0.2°–5°) available for specialized
applications.
Ultra-High Purity (5N Al₂O₃):
99.999% purity with trace impurities (Fe, Ti, Si) <5 ppm,
ensuring minimal electrical/optical losses.
Customizable Dimensions & Orientations:
Diameters: 2", 3", 4", 6", 8"
Thickness: 100 µm to 1,000 µm (±5 µm tolerance).
Alternative orientations: A-plane (1120), R-plane (1102), or mixed
cuts upon request.
Superior Surface Quality:
Epi-ready polish: Ra <0.5 nm (front side) for defect-free
thin-film deposition.
Double-side polishing (DSP): Ra <0.3 nm for optical
applications.
Exceptional Material Properties:
Thermal stability: Melting point ~2,050°C, suitable for MOCVD/MBE
processes.
Optical transparency: >85% transmission (UV to mid-IR: 250–5,000
nm).
Mechanical robustness: 9 Mohs hardness, resistant to
chemical/abrasive wear.
Applications of Sapphire Wafer
Optoelectronics:
GaN-based LEDs/Laser Diodes: Blue/UV LEDs, micro-LEDs, and
edge-emitting lasers.
Laser windows: High-power CO₂ and excimer laser components.
Power & RF Electronics:
HEMTs (High-Electron-Mobility Transistors): 5G/6G power amplifiers
and radar systems.
SAW/BAW Filters: M-plane orientation enhances piezoelectric
performance.
Industrial & Defense:
IR windows and missile domes: High transparency in extreme
environments.
Sapphire sensors: Corrosion-resistant covers for harsh conditions.
Quantum & Research Technologies:
Substrates for superconducting qubits (quantum computing).
Nonlinear optics: SPDC crystals for quantum entanglement studies.
Semiconductor & MEMS:
SOI (Silicon-on-Insulator) wafers for advanced ICs.
MEMS resonators: High-frequency stability with M-plane cuts.
Specifications
Parameter | Value |
|---|
| Diameter | 2", 3", 4", 6", 8" (±0.1 mm) |
| Thickness | 100–1,500 µm (±5 µm) |
| Orientation | off C-axis toward M-Plane 20° |
| Purity | 99.999% (5N Al₂O₃) |
| Surface Roughness (Ra) | <0.5 nm (epi-ready) |
| Dislocation Density | <500 cm⁻² |
| TTV (Total Thickness Variation) | <10 µm |
| Bow/Warp | <15 µm |
| Optical Transparency | 250–5,000 nm (>85%) |
Q&A
Q1: Why choose a 20° off from C-axis toward M-Plane for epitaxy?
A1: The M-axis off-cut improves adatom mobility during growth,
reducing defects and enhancing uniformity in GaN films for
high-power devices.
Q2: Can I request other off-cut directions (e.g., A-axis)?
A2: Yes. Custom orientations (A-plane, R-plane, or mixed cuts) are
available with ±0.1° tolerance.
Q3: What’s the advantage of DSP for laser applications?
A3: DSP provides <0.3 nm roughness on both sides, reducing scatter
losses for high-power laser optics.
