2" Sapphire Wafer C-Plane to A 0.2°±0.1° Off, 99.999% Al₂O₃, 430µm Thickness, DSP/SSP
This 2-inch sapphire wafer features ultra-precise C-plane to A-axis off-cut (0.2°±0.1°) and 99.999% (5N) purity, optimized for high-performance epitaxial growth and specialized
optoelectronic applications. With a 430µm thickness and options for double-side polishing (DSP) or single-side polishing (SSP), the wafer delivers exceptional surface quality (Ra <0.3nm) and
crystallographic consistency, making it ideal for GaN-based
devices, laser systems, and research-grade substrates. Its
controlled off-axis orientation reduces step-bunching defects
during epitaxy, while the ultra-high purity ensures minimal
impurity-driven performance degradation in sensitive applications
like quantum optics and RF filters.
Key Features
Precision Off-Cut Orientation:
C-plane to A-axis 0.2°±0.1° off-cut, engineered to enhance epitaxial layer uniformity and reduce
defects in GaN growth.
Ultra-High Purity:
99.999% (5N) Al₂O₃, with trace impurities (Fe, Ti, Si) <5ppm, critical for
high-frequency and low-loss devices.
Submicron Surface Quality:
DSP/SSP options:
DSP: Ra <0.3nm (both sides), ideal for optical and laser
applications.
SSP: Ra <0.5nm (front side), cost-effective for epitaxy.
TTV <5µm for uniform thin-film deposition.
Material Excellence:
Thermal Stability: Melting point ~2,050°C, suitable for MOCVD/MBE processes.
Optical Transparency: >90% transmission (400nm–4,000nm).
Mechanical Robustness: 9 Mohs hardness, resistant to chemical etching.
Research-Grade Consistency:
Dislocation density <300 cm⁻², ensuring high yield for R&D and pilot production.
Applications
GaN Epitaxy:
LEDs/Laser Diodes: Blue/UV emitters with reduced threading dislocations.
HEMTs: High-electron-mobility transistors for 5G and radar.
Optical Components:
Laser Windows: Low scatter loss for CO₂ and UV lasers.
Waveguides: DSP wafers for integrated photonics.
Acoustic Wave Devices:
SAW/BAW Filters: Off-cut orientation improves frequency stability.
Quantum Technologies:
Single-Photon Sources: High-purity substrates for SPDC crystals.
Industrial Sensors:
Pressure/Temperature Sensors: Chemically inert covers for harsh environments.
Specifications
Parameter | Value |
|---|
| Diameter | 50.8mm (2") ±0.1mm |
| Thickness | 430µm ±10µm |
| Orientation | C-plane to A 0.2°±0.1° off |
| Purity | 99.999% (5N Al₂O₃) |
| TTV | <5µm |
| Bow/Warp | <20µm |
Q&A
Q1: Why choose a 0.2° off-cut instead of standard C-plane?
A1: The 0.2° off-cut suppresses step-bunching during GaN epitaxy, improving layer uniformity and reducing
defects in high-brightness LEDs and laser diodes.
Q2: How does 5N purity impact RF device performance?
A2: 99.999% purity minimizes dielectric losses at high frequencies, critical for 5G filters and low-noise
amplifiers.
Q3: Can DSP wafers be used for direct bonding?
A3: Yes. DSP’s <0.3nm roughness enables atomic-level bonding for heterogenous integration (e.g.,
sapphire-on-silicon).
Q4: What’s the advantage of 430µm thickness?
A4: Balances mechanical strength (for handling) with thermal conductivity, optimal for rapid thermal processing.
