Customized Sic Ceramics carrier End Effector for Wafer Handling
The wafer handling end effector, manufactured with ultra-precision
machining technology, achieves micron-level dimensional accuracy
(±0.01mm) and exceptional thermal stability (CTE ≤4.5×10⁻⁶/K). Its
surface features an advanced CVD-deposited nanocrystalline SiC
protective layer (purity >99.995%), delivering superior surface
finish (Ra<0.05μm) and wear resistance (wear rate <0.1μm/1000
cycles), while ensuring damage-free wafer transfer at high speeds
(1.5m/s) with minimal particle generation (<5 particles/ft³).
Our high-purity SiC-coated end effector demonstrates outstanding
performance stability across extreme temperatures (-200°C~1200°C),
excellent thermal uniformity (±1°C@150mm wafer) for epitaxial
growth thickness consistency (±1.5%), and remarkable chemical
resistance (pH1-13), maintaining reliable operation through
>100,000 cycles.
Technical specification:
| Crystal Structure | FCC β phase | | Density | g/cm ³ | 3.21 | | Hardness | Vickers hardness | 2500 | | Grain Size | μm | 2~10 | | Chemical Purity | % | 99.99995 | | Heat Capacity | J·kg-1 ·K-1 | 640 | | Sublimation Temperature | ℃ | 2700 | | Felexural Strength | MPa (RT 4-point) | 415 | | Young’ s Modulus | Gpa (4pt bend, 1300℃) | 430 | | Thermal Expansion (C.T.E) | 10-6K-1 | 4.5 | | Thermal conductivity | (W/mK) | 300 |
|
Key features of End Effector for Wafer Handling
1. Nanoscale SiC Protective Layer via CVD Technology
- Deposited using hot-wall CVD reactor (1200°C) with 20-50nm grain
size
- Coating density ≥3.18g/cm³, porosity <0.1%
2. Exceptional High-Temperature Stability & Thermal Uniformity
- Maintains thermal conductivity ≥120W/m·K at 1000°C
-Thermal deformation <0.02mm/100mm (ASTM E228 certified)
3. Ultra-Fine SiC Crystalline Coating for Atomic-Level Smoothness
- Diamond slurry polished to Ra<0.3nm (AFM verified)
- Surface friction coefficient μ<0.15 (vs. silicon wafer)
4. Superior Chemical Resistance & Cleaning Durability
- Etching rate <0.01μm/cycle in SC1/SC2 solutions
- Passes 2000-cycle ozone water cleaning test (80°C)
5. Proprietary Structural Design Preventing Cracking/Delamination
- Stress buffer layer design (SiC/Si gradient transition)
- Withstands 1000 thermal shock cycles (-196°C~300°C) (MIL-STD-883
compliant)
Primary applications of End Effector for Wafer Handling
1. Semiconductor Front-End Processes:
· Wafer transportation within fabs (AMHS)
· Lithography tool loading/unloading
2. Advanced Packaging:
· Precision alignment for Fan-out and 3D IC stacking
· Ultra-thin wafer handling (<100μm) for GaN/SiC compound
semiconductors
3. Vacuum Environments:
· Wafer transfer in PVD/CVD chambers
Process Compatibility, Materials & Applications
| Category | Specification | Technical Parameters |
Process Compatibility
| High-speed transfer | Supports 300mm wafers at ≥1.5m/s, 0.5G acceleration |
| Ultra-thin wafer handling | Stress-free gripping of 50μm wafers (optional vacuum chuck) |
| Cleanroom compatibility | SEMI S2/S8 certified, particle-free operation |
Material Types
| CVD-SiC | Ultra-high purity (Ra<0.1μm), ≤5nm node processes |
| RBSiC | Cost-effective for packaging/test applications |
| SiC-coated aluminum | Lightweight composite for non-critical processes |
Core Functions
| Traditional end effector replacement | Eliminates thermal deformation/contamination (vs quartz/aluminum) |
| Precision alignment | Wafer-to-equipment (robots/process chambers) |
| Breakage reduction | <0.001% breakage rate, improves OEE |
Products pictures of End Effector for Wafer Handling
ZMSH is a leading provider of high-performance Silicon Carbide
(SiC) wafer handling solutions, specializing in
precision-engineered carrier plates and end effectors for
semiconductor manufacturing. Our advanced SiC components feature
ultra-pure CVD coatings with surface roughness below 0.1μm Ra,
ensuring particle-free operation in Class 1 cleanroom environments.
The products demonstrate exceptional thermal stability, maintaining
dimensional accuracy within ±0.03mm across extreme temperature
ranges from -200°C to 1300°C, with thermal expansion coefficients
as low as 4.1×10⁻⁶/K.
Q&A
