High-Purity SiC Coated Carrier Plate for Wafer Handling and
Transfer
The SiC Carrier Plate (Silicon Carbide Carrier Plate) is a
high-performance ceramic component widely used in advanced
manufacturing sectors such as semiconductors, LEDs, and power
electronics. Renowned for its exceptional thermal resistance, high
thermal conductivity, low thermal expansion, and superior
mechanical strength, it is the ideal solution for high-temperature
processes. ZMSH provides customized SiC Carrier Plate solutions,
including design, manufacturing, testing, and after-sales support,
ensuring optimal performance and reliability for wafer handling,
epitaxial growth, and other critical applications.
Technical specification:
| Property | Value | Method |
| Density | 3.21 g/cc | Sink-float and dimension |
| Specific heat | 0.66 J/g °K | Pulsed laser flash |
| Flexural strength | 450 MPa560 MPa | 4 point bend, RT4 point bend, 1300° |
| Fracture toughness | 2.94 MPa m1/2 | Microindentation |
| Hardness | 2800 | Vicker's, 500g load |
| Elastic ModulusYoung's Modulus | 450 GPa430 GPa | 4 pt bend, RT4 pt bend, 1300 °C |
| Grain size | 2 – 10 μm | SEM |
Key features of SiC Carrier Plate
1. Ultra-High Temperature Resistance – Stable operation up to 1650°C, ideal for CVD, MOCVD, and other
high-temperature processes.
2. Superior Thermal Management – Thermal conductivity of 120-200 W/m·K ensures rapid heat
dissipation and minimizes thermal stress.
3. Low Thermal Expansion (4.3×10⁻⁶/K) – Exceptional dimensional stability at high
temperatures, preventing wafer misalignment or cracking.
4. High Hardness & Wear Resistance – Mohs hardness of 9.2, far exceeding quartz and graphite, extends
service life.
5. Chemical Inertness – Resistant to acids, alkalis, and plasma erosion, suitable for
harsh environments.
6. High Purity & Contamination-Free – Metal impurity levels <1 ppm, meeting semiconductor-grade
cleanliness standards.
Primary applications of SiC Carrier Plate
· Semiconductor Manufacturing – Wafer epitaxy (GaN/SiC), CVD reaction chamber carrier.
· LED Production – Supports sapphire substrates for uniform MOCVD growth.
· Power Electronics – High-temperature sintering carrier for SiC/GaN power devices.
· Advanced Packaging – Precision placement and laser processing substrate.
Process Compatibility, Materials & Applications
| Category | Item | Description |
| Process Compatibility | High-Temperature Epitaxy | Compatible with GaN/SiC epitaxial growth (>1200°C) |
| Plasma Environments | Resists RF/microwave plasma bombardment for etching systems |
| Rapid Thermal Cycling | Excellent thermal shock resistance for repeated heating/cooling |
| Material Types | Reaction-Bonded SiC (RBSiC) | Cost-effective for industrial applications |
| Chemical Vapor Deposition SiC (CVD-SiC) | Ultra-high purity (>99.9995%) for semiconductor processes |
| Hot-Pressed SiC (HPSiC) | High density (>3.15 g/cm³) for heavy wafer loads |
| Core Functions | Wafer Handling & Fixation | Secures wafers without slippage at high temperatures |
| Thermal Uniformity | Optimizes temperature distribution for epitaxial growth |
| Graphite Alternative | Eliminates oxidation and particle contamination risks |
Products pictures of SiC Carrier Plate
ZMSH delivers comprehensive end-to-end solutions for Silicon
Carbide Carrier Plates (SiC Carrier Plates), offering customized
design services with tailored dimensions, aperture patterns, and
surface treatments including mirror polishing and specialized
coatings, precision manufacturing utilizing CVD/RBSiC processes
that maintain strict batch consistency within ±0.05mm tolerances,
rigorous quality inspection protocols, expedited prototype delivery
with 72-hour turnaround, and global technical support with 24/7
responsiveness, ensuring customers receive high-performance
products with exceptional uniformity and reliability for their
critical applications.
Q&A
