SiC Multi-Wafer Carrier Plate Pressureless sintered silicon carbide
for Wafer support
Core Competitiveness of the ZMSH:
As a globally leading silicon carbide (SiC) semiconductor material
solutions provider, ZMSH has developed proprietary SiC
Multi-Wafer Susceptors leveraging ultra-high-purity SiC
single-crystal growth technology and advanced coating
engineering. These susceptors address critical challenges in
compound semiconductor manufacturing, including thermal stress
cracking and contamination, through:
· Ultra-high thermal stability (operating above 1600°C)
· Nano-scale thermal conductivity control (lateral thermal
conductivity >350 W/m·K)
· Chemically inert surfaces (resistance to acid/base corrosion
per ASTM G31 III)
Validated by 1,200-hour reliability tests at TSMC and Mitsubishi
Electric, the product achieves 99.95% yield for 6-inch wafer mass
production and 8-inch process qualification.
Technical specification:
| Parameter | Value | Unit | Test Condition |
| Silicon Carbide Content | >99.5 | % | - |
| Average Grain Size | 4-10 | μm (micron) | - |
| Bulk Density | >3.14 | kg/dm³ | - |
| Apparent Porosity | <0.5 | Vol % | - |
| Vickers Hardness | 2800 | HV0.5 Kg/mm² | - |
| Modulus of Rupture (3 points) | 450 | MPa | 20°C |
| Compression Strength | 3900 | MPa | 20°C |
| Modulus of Elasticity | 420 | GPa | 20°C |
| Fracture Toughness | 3.5 | MPa·m¹ᐟ² | - |
| Thermal Conductivity | 160 | W/(m·K) | 20°C |
| Electrical Resistivity | 10⁶-10⁸ | Ohm·cm | 20°C |
| Coefficient of Thermal Expansion | 4.3 | K⁻¹×10⁻⁶ | RT~800°C |
| Max. Application Temperature | 1600 (oxidizing atmosphere ) / 1950 (inert atmosphere) | °C | Oxide/Inert Atmosphere |
Key features of SiC tray
1. Material Innovations
- High-Purity SiC Single Crystal: Grown via Physical Vapor Transport (PVT) with boron (B) doping
<5×10¹⁵ cm⁻³, oxygen (O) content <100 ppm, and dislocation
density <10³ cm⁻², ensuring thermal expansion coefficient (CTE)
matching SiC wafers (Δα=0.8×10⁻⁶/K).
- Nanostructured Coatings: Plasma-enhanced Chemical Vapor Deposition (PECVD) of 200nm TiAlN
coatings (hardness 30GPa, friction coefficient <0.15) minimizes
wafer scratching.
2. Thermal Management
- Gradient Thermal Conductivity: Multi-layer SiC/SiC composites achieve ±0.5°C temperature
uniformity across 8-inch carriers.
- Thermal Shock Resistance: Survives 1,000 thermal cycles (ΔT=1500°C) without cracking,
outperforming graphite carriers by 5× lifespan.
3. Process Compatibility
- Multi-Process Support: Compatible with MOCVD, CVD, and Epitaxy at 600–1600°C and 1–1000
mbar.
- Wafer Size Flexibility: Supports 2–12-inch wafers for GaN-on-SiC and SiC-on-SiC
heterostructures.
Primary applications of SiC tray
1. Compound Semiconductor Manufacturing
· GaN Power Devices: Enables 2.5kV MOSFET epitaxial growth on 4-inch GaN-on-SiC wafers
at 1200°C, achieving <5×10⁴ cm⁻² defect density.
· SiC RF Devices: Supports 4H-SiC-on-SiC heteroepitaxy for HEMTs with 220 mS/mm
transconductance and 1.2 THz cutoff frequency.
2. Photovoltaics & LEDs
· HJT Passivation Layers: Achieves <1×10⁶ cm⁻² interfacial defects in MOCVD, boosting
solar cell efficiency to 26%.
· Micro-LED Transfer: Enables 99.5% transfer efficiency for 5μm LEDs using electrostatic
alignment at 150°C.
3. Aerospace & Nuclear
· Radiation Detectors: Produces CdZnTe wafers with <3keV FWHM energy resolution for
NASA deep-space missions.
· Control Rod Seals: SiC-coated carriers withstand 1×10¹⁹ n/cm² neutron irradiation for
40-year reactor lifespans.
Products pictures of SiC tray
ZMSH deliver end-to-end technical solutions, spanning material
R&D, process optimization, and mass production support.
Leveraging high-precision customized manufacturing (±0.001mm
tolerance) and nanoscale surface treatment technologies (Ra
<5nm), we provide wafer-level carrier solutions for
semiconductor, optoelectronics, and renewable energy sectors,
ensuring 99.95% yield and performance reliability.
Q&A
