12inch Diameter 300mm SIC Substrate Epitaxial Polished Wafer Silicon Carbide Ingot Prime
Grade 4H Type Conductive Solar Photovoltaic
Product introduction
12 inch SiC substrate (12-inch SiC substrate) is a large silicon
carbide (SiC) wafer, mainly used in the manufacture of
high-performance semiconductor devices. Silicon carbide is a wide
bandgap semiconductor material with excellent physical and chemical
properties, suitable for high power, high frequency and high
temperature applications. It has a wide range of applications in
power electronics, radio frequency devices, new energy vehicles,
industrial applications and other fields, while bringing
significant economic and environmental benefits to the
semiconductor industry by improving production efficiency, reducing
costs and driving technological progress. With the continuous
development of silicon carbide technology, 12 inch substrates will
occupy an important position in the future market. The introduction
of the 12 inch substrate marks a major breakthrough in the size and
capacity of silicon carbide technology to meet the growing market
demand.
Product Parameters
| Diameter | 300.0 mm+0mm/-0.5mm |
| Surface Orientation | 4°toward<11-20>±0.5° |
| Primary Flat Length | Notch |
| Secondary Flat Length | None |
| Notch Orientation | <1-100>±1° |
| Notch Angle | 90°+5/-1° |
| Notch Depth | 1mm+0.25mm/-0mm |
| Orthogonal Misorientation | ±5.0° |
| Surface Finish | C-Face:Optical Polish,Si-Face:CMP |
| Wafer Edge | Beveling |
Surface Roughness
(10μm×10μm) | Si-Face:Ra≤0.2 nm C-Face:Ra≤0.5 nm |
| Thickness | 500.0μm±25.0μm |
| LTV(10mmx10mm) | ≤3μm |
| TTV | ≤10μm |
| BOW | ≤25μm |
| Warp | ≤40μm |
| Surface Parameters |
| Chips/Indents | None permitted≥0.5mm Width and Depth |
Scratches²
(Si face CS8520) | ≤5 and Cumulative Length≤1 Wafer Diameter |
| TUA²(2mm*2mm) | ≥95% |
| Cracks | None Permitted |
| Stain | None Permitted |
| Edge Exclusion | 3mm |
Product characteristics
1. Large size: 12 inch (300mm) diameter, compared with the
traditional 6 inch (150mm) and 8 inch (200mm) substrate, greatly
improving the chip output of a single wafer.
2. High crystal quality: The use of advanced crystal growth
technology (such as physical vapor transfer method, PVT) to ensure
that the substrate has low defect density and high uniformity.
Excellent physical properties:
1. High hardness (Mohs hardness 9.2, second only to diamond).
2. High thermal conductivity (about 4.9W /cm·K), suitable for high
power device heat dissipation.
3. High breakdown electric field strength (about 2.8MV /cm),
support high voltage applications.
4. Chemical stability: high temperature resistance, corrosion
resistance, suitable for harsh environment.
5. Wide band gap: The band gap is 3.26 eV (4H-SiC), suitable for
high temperature and high power applications.
Product Applications
1. Power electronics:
MOSFETs and IGBTs: Used in electric vehicles, industrial motor
drives and renewable energy systems.
Schottky diodes: For high efficiency power conversion and power
distribution systems.
2. Rf devices:
5G communication base station: supports high-frequency and
high-power RF signal transmission.
Radar systems: Used in aerospace and defense.
3. New energy vehicles:
Electric drive system: improve the motor drive efficiency and
endurance of electric vehicles.
Car charger: Supports fast charging and high power transmission.
4. Industrial applications:
High voltage power supply: used in industrial equipment and power
systems.
Solar inverter: improve the conversion efficiency of solar power
generation system.
5. Consumer Electronics:
Fast charging device: Support high power fast charging technology,
shorten charging time.
High efficiency power adapter: Used for power management of devices
such as laptops and mobile phones.
6. Aerospace:
High-temperature electronics: Power systems for aircraft and
spacecraft, adapted to extreme environments.
Product advantage
1. Improve production efficiency: The 12-inch substrate area is 2.25 times that of the 8-inch
substrate, and more chips can be produced in a single process,
reducing the unit chip cost.Reduce edge losses and improve material
utilization.
2. Reduce manufacturing costs: The large substrate size reduces equipment switching and process
steps in the manufacturing process and optimizes the production
flow.Large-scale production further reduces costs.
3. Improve device performance: High crystal quality and low defect density improve the
reliability and performance of the device.Excellent physical
properties support higher power and higher frequency applications.
4. Driving technological progress: The 12-inch substrate has promoted the large-scale application of
silicon carbide semiconductor technology and accelerated industry
innovation.
5. Environmental protection and energy saving: The efficient performance of silicon carbide devices reduces
energy consumption and is in line with the trend of green
manufacturing and sustainable development.
Other Products We Can Provide
8inch SiC Wafer Silicon Carbide Wafer Prime Dummy Research Grade
500um 350 Um
4H-Semi High Purity SIC Wafers Prime Grade Semiconductor EPI
Substrates
3C/4H/6H type SiC Substrate Silicon Carbide Substrate Prime Grade
Dummy Grade
About us
ZMSH is a high-tech company focusing on semiconductor substrates
and optical crystal materials, committed to research, production,
processing and marketing of high-quality optoelectronic materials.
We have an experienced engineering team with deep industry
knowledge and technical expertise to provide customized solutions
to our customers.
With strong research and development capabilities, advanced
processing equipment, strict quality control and customer-oriented
service philosophy, ZMSH is committed to providing customers with
high-quality semiconductor substrates and optical crystal
materials. We will continue to strive to become a leading
enterprise in the field of optoelectronic materials and create
greater value for customers.
FAQ
1. Q: What are the key advantages of 12 inch SiC substrates over
smaller sizes?
A: The key advantages of 12 inch SiC substrates include:
Cost Reduction: Larger wafers reduce the cost per chip due to
higher yield and better material utilization.
Scalability: They enable mass production, which is critical for
meeting the growing demand in industries like automotive and
telecommunications.
Enhanced Performance: The larger size supports advanced
manufacturing processes, leading to higher-quality devices with
fewer defects.
Competitive Edge: Companies adopting 12 inch SiC technology can
stay ahead in the market by offering more efficient and
cost-effective solutions.
Tags: #12 inch SIC wafer, #Larger size, #Silicon carbide substrate,
#4H-N Type, #Conductive, #Solar Photovoltaic, #12 inch SiC,
#Large-diameter (300mm)
