12inch Sic wafer silicon carbide 4H-N type production grade dummy
grade large size
A 12-inch silicon carbide (SiC) substrate is a large-size substrate
material used to manufacture high-performance semiconductor
devices. Silicon carbide is a wide bandgap semiconductor material
with excellent physical, chemical and electrical properties for
high temperature, high frequency and high power applications. The
12-inch (300 mm) substrate is currently at the forefront of silicon
carbide technology and represents the semiconductor industry's
demand trend for large size, high efficiency and low cost
manufacturing.
The manufacturing process of the 12-inch silicon carbide substrate
includes steps such as crystal growth, cutting, grinding and
polishing. Common crystal growth methods include physical vapor
transfer (PVT) and high temperature chemical vapor deposition
(HTCVD) to ensure high purity and crystal quality of the material.
Through precision machining, 12-inch silicon carbide substrates can
meet the stringent requirements of advanced semiconductor devices
for surface flatness, defect density and electrical properties.
Due to its excellent performance, 12-inch silicon carbide substrate
has a wide range of application prospects in the fields of power
electronics, radio frequency communications, new energy vehicles
and industrial equipment, and has become one of the key materials
to promote the development of next-generation semiconductor
technology.
12inch Sic wafer characteristic
- Wide band gap characteristics:Silicon carbide has a band gap of
3.26 eV (4H-SiC), which is much higher than silicon (1.12 eV),
enabling it to operate stably in high temperature, high frequency
and high voltage environments.
- High thermal conductivity:The thermal conductivity of silicon
carbide is as high as 4.9W /cm·K, which is more than 3 times that
of silicon, and it can effectively dissipate heat and is suitable
for the manufacture of high power density devices.
- High breakdown electric field strength:The breakdown electric field
strength of silicon carbide is 2.8 MV/cm, which is 10 times that of
silicon, making it able to withstand higher voltages and suitable
for high-voltage devices.
- High electron saturation drift velocity:Silicon carbide has
electron saturation drift speeds of up to 2.0×10^7 cm/s, making it
excellent in high-frequency applications and suitable for RF and
microwave devices.
- Excellent chemical stability:Silicon carbide has strong corrosion
resistance to most acids, bases and solvents, and can maintain
stable performance in harsh environments.
- Large size and high uniformity:The 12-inch silicon carbide
substrate has a larger surface area and higher crystal quality
uniformity, which can improve the efficiency and yield of device
manufacturing and reduce production costs.
- Low defect density:Through advanced crystal growth and processing
technologies, the defect density of 12-inch silicon carbide
substrates is significantly reduced to meet the manufacturing needs
of high-performance devices.
12inch Sic wafer Parameter
| Diameter | 300.0 mm+0mm/-0.5mm |
| Surface Orientation | 4°toward<11-20>±0.5° |
| Primary Flat Length | Notch |
| Secondary Flat Length | None |
| Notch Orientation | <1-100>±1° |
| Notch Angle | 90°+5/-1° |
| Notch Depth | 1mm+0.25mm/-0mm |
| Orthogonal Misorientation | ±5.0° |
| Surface Finish | C-Face:Optical Polish,Si-Face:CMP |
| Wafer Edge | Beveling |
| Surface Roughness(10μm×10μm) | Si-Face:Ra≤0.2 nm C-Face:Ra≤0.5 nm |
| Thickness | 500.0μm±25.0μm |
| LTV(10mmx10mm) | ≤3μm |
| TTV | ≤10μm |
| BOW | ≤25μm |
| Warp | ≤40μm |
| Surface Parameters |
| Chips/Indents | None permitted≥0.5mm Width and Depth |
| Scratches²(Si face CS8520) | ≤5 and Cumulative Length≤1 Wafer Diameter |
| TUA²(2mm*2mm) | ≥95% |
| Cracks | None Permitted |
| Stain | None Permitted |
| Edge Exclusion | 3mm |
12inch Sic wafer applications
- Power electronic device:12-inch silicon carbide substrates are widely used in the
manufacture of high-voltage, high-power power electronic devices
such as MOSFETs (metal oxide semiconductor field-effect
transistors), IGBTs (insulated gate bipolar transistors) and
Schottky diodes. These devices have important applications in new
energy vehicles, industrial motors and renewable energy systems.
- Radio frequency and microwave devices:Silicon carbide's high electron saturation drift speed and
excellent thermal properties make it an ideal material for
manufacturing RF and microwave devices, which are widely used in 5G
communications, radar and satellite communications.
- New energy vehicle:In new energy vehicles, 12-inch silicon carbide substrates are used
to manufacture key components such as motor controllers, on-board
chargers and DC-DC converters to improve vehicle energy efficiency
and endurance.
- Industrial equipment:In the industrial sector, silicon carbide substrates are used to
manufacture power modules, inverters and inverters with high power
density and reliability to meet the needs of industrial automation
and intelligent manufacturing.
- Renewable energy:In solar inverters and wind power systems, silicon carbide devices
can significantly improve energy conversion efficiency, reduce
system losses, and promote the development of renewable energy
technology.
- Aerospace and Defense:The high temperature, high frequency and high power characteristics
of SIC substrates make them important applications in the aerospace
and defense fields, such as radar systems, communications equipment
and power management systems.
- Consumer electronics:In the consumer electronics sector, silicon carbide substrates are
used to manufacture efficient and compact power adapters and fast
charging devices to meet consumer demand for high-performance
electronic products.
12inch Sic wafer display
12 "silicon carbide substrate with its wide band gap
characteristics, high thermal conductivity, high breakdown electric
field strength and high electron saturation drift speed and other
excellent properties.
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