Sic silicon carbide wafer 4H-P type on axis 0°Used to manufacture
high power devices
4H-P type silicon carbide substrate is a semiconductor material
with a hexagonal lattice structure, and P-type conductivity is
obtained by a specific doping process (such as doping aluminum and
other elements). Such substrates typically have high doping
concentrations and low resistivity, making them ideal for
manufacturing high-power devices. An axis of 0° usually refers to
the fact that a particular crystal direction or positioning edge of
the substrate has an Angle of 0° from a reference direction (such
as the substrate plane), which helps to ensure the consistency and
reliability of the device in subsequent manufacturing processes.
Features:
- Wide band gap: Type 4H-P silicon carbide has a wide band gap of about 3.26 eV,
which enables it to work stably in high temperature and high
voltage environments.
- High thermal conductivity: With a thermal conductivity of about 4.9W /m·K, much higher than
silicon materials, it can effectively direct and dissipate heat,
suitable for high power density applications.
- Low resistivity: P-type doped silicon carbide has a low resistivity, suitable for
the construction of PN junction, so as to meet the needs of high
power devices.
- High hardness and mechanical strength: Silicon carbide materials have very high mechanical strength and
toughness for applications under harsh conditions.
- High breakdown voltage: Able to withstand higher voltages, helping to reduce device size
and improve energy efficiency.
Technical Parameter
Propery | P-type 4H-SiC, Single Crystal |
Lattice Parameters | a=3.082 Å c=10.092 Å |
Stacking Sequence | ABCB |
Mohs Hardness | ≈9.2 |
Density | 3.23 g/cm3 |
Therm. Expansion Coefficient | 4.3×10-6/K(⊥Caxis) 4.7×10-6/K( ∥Caxis) |
Refraction Index @750nm | no = 2.621 ne = 2.671 |
Dielectrc Constant | c~9.66 |
Thermal Conductivity | 3-5 W/cm·K@298K |
Band-Gap | 3.26 eV |
Break-Down Electrical Field | 2-5×106V/cm |
Saturation Drift Velocity | 2.0×105m/s |
Wafer Orientation | On axis: [1120] ± 0.5° for 4H/6H-P |
Applications:
- Power electronics: 4H-P type silicon carbide substrate can be used to manufacture all
kinds of high-voltage devices, such as IGBT, MOSFET, etc. These
devices are widely used in DC power transmission, frequency
converter, industrial power supply and other fields. Especially in
electric vehicles and renewable energy technologies, silicon
carbide devices can significantly improve power conversion
efficiency and reduce energy consumption.
- Semiconductor lighting field: It can be used to manufacture high-efficiency and high-reliability
LED chips, which are widely used in liquid crystal display
backlight, landscape lighting, automotive lights and other fields.
The high thermal conductivity of silicon carbide substrate helps to
improve the luminous efficiency and stability of LED.
- Sensor field: can be used to manufacture high-sensitivity, high-stability
sensors, such as pressure sensors, temperature sensors, etc. These
sensors have important applications in automotive electronics,
medical equipment, environmental monitoring and other fields. The
high temperature stability and chemical inertness of SIC substrates
make it an ideal material for the manufacture of highly reliable
sensors.
- Microwave radio frequency field: Although the silicon carbide N substrate is widely used in this
field, the 4H-P type silicon carbide substrate can also be used by
specific processes to manufacture high frequency and high power
electronic devices, such as amplifiers, oscillators, etc. These
devices have potential applications in wireless communication,
satellite communication, radar and other fields.
Customization:
ZMSH provides a full range of silicon carbide substrate 4H-P (axis
0°) services, including precision custom processing to meet
customer specific needs, the use of professional logistics channels
to ensure product safety and on-time delivery, and the use of
shock-proof, moisture-proof packaging materials carefully packaged
and delivered to ensure high-quality delivery of silicon carbide
substrates.
FAQ:
