Silicon Carbide Wafer Sic Substrate 4H-P Type Off axis: 4.0°toward
Zero Grade For temperature sensor
4H-P silicon carbide (SiC) substrate is a high performance
semiconductor material with a unique hexagonal lattice structure.
Its "4H" indicates the type of crystal structure of the material,
while "P-type" refers to the P-type conductivity obtained by doping
elements such as aluminum. The 4.0° off-axis design further
optimizes its electrical and thermal performance, giving it
significant advantages in high temperature, high frequency and high
power electronics.
Features:
- Wide band gap: 4H-P type silicon carbide has a wide band gap of about 3.26 eV,
making it able to withstand higher temperatures and voltages and
suitable for high temperature and high-frequency applications.
- High thermal conductivity: Its thermal conductivity is about 4.9W /m·K, much higher than
silicon materials, can effectively guide and dissipate heat,
suitable for high power density applications.
- Low resistivity: P-type doped silicon carbide has a low resistivity, which is
conducive to the construction of PN junction and improve the
performance of the device.
- High hardness and toughness: Very high mechanical strength and toughness for applications under
harsh conditions.
- High breakdown voltage: able to withstand higher voltages, helping to reduce device size
and improve energy efficiency.
- Low switching loss: Good switching characteristics in high frequency operation to
improve overall efficiency.
- Corrosion resistance: It has good corrosion resistance to a variety of chemicals, which
enhances the stability and reliability of the device.
Technical Parameter:
6 inch diameter Silicon Carbide (SiC) Substrate Specification
| 等级Grade | 精选级(Z 级) Zero MPD Production Grade (Z Grade) | 工业级(P 级) Standard Production Grade (P Grade) | 测试级(D 级) Dummy Grade (D Grade) |
| 直径 Diameter | 145.5 mm~150.0 mm |
| 厚度 Thickness | 350 μm ± 25 μm |
| 晶片方向 Wafer Orientation | - Off axis: 2.0°-4.0°toward [1120] ± 0.5° for 4H/6H-P, On axis:〈111〉±
0.5° for 3C-N |
| 微管密度 ※ Micropipe Density | 0 cm-2 |
| 电 阻 率 ※ Resistivity | p-type 4H/6H-P | ≤0.1 Ωꞏcm | ≤0.3 Ωꞏcm |
| n-type 3C-N | ≤0.8 mΩꞏcm | ≤1 m Ωꞏcm |
| 主定位边方向 Primary Flat Orientation | 4H/6H-P | - {1010} ± 5.0° |
| 3C-N | - {110} ± 5.0° |
| 主定位边长度 Primary Flat Length | 32.5 mm ± 2.0 mm |
| 次定位边长度 Secondary Flat Length | 18.0 mm ± 2.0 mm |
| 次定位边方向 Secondary Flat Orientation | Silicon face up: 90° CW. from Prime flat ± 5.0° |
| 边缘去除 Edge Exclusion | 3 mm | 6 mm |
| 局部厚度变化/总厚度变化/弯曲度/翘曲度 LTV/TTV/Bow /Warp | ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm/≤15 μm/≤25 μm/≤40 μm |
| 表面粗糙度 ※ Roughness | Polish Ra≤1 nm |
| CMP Ra≤0.2 nm | Ra≤0.5 nm |
| 边缘裂纹(强光灯观测) Edge Cracks By High Intensity Light | None | Cumulative length ≤ 10 mm, single length≤2 mm |
| 六方空洞(强光灯测) ※ Hex Plates By High Intensity Light | Cumulative area ≤0.05% | Cumulative area ≤0.1% |
| 多型(强光灯观测) ※ Polytype Areas By High Intensity Light | None | Cumulative area≤3% |
| 目测包裹物(日光灯观测) Visual Carbon Inclusions | Cumulative area ≤0.05% | Cumulative area ≤3% |
| 硅面划痕(强光灯观测) # Silicon Surface Scratches By High Intensity Light | None | Cumulative length≤1×wafer diameter |
| 崩边(强光灯观测) Edge Chips High By Intensity Light | None permitted ≥0.2mm width and depth | 5 allowed, ≤1 mm each |
| 硅面污染物(强光灯观测) Silicon Surface Contamination By High Intensity | None |
| 包装 Packaging | Multi-wafer Cassette or Single Wafer Container |
Notes:
※ Defects limits apply to entire wafer surface except for the edge
exclusion area. # The scratches should be checked on Si face only.
Applications:
- Electric vehicles: In the drive modules and charging stations of electric vehicles,
4H-P silicon carbide substrates can be used to manufacture power
devices such as highly efficient IGBTs (insulated gate bipolar
transistors) to optimize power conversion efficiency and extend
battery range.
- Inverter: It is used to manufacture high-performance inverters to convert
direct current into alternating current, which is widely used in
solar power generation, wind power generation and other fields to
improve energy conversion efficiency.
- High Power amplifier: In communications and radar systems, type 4H-P SIC substrates can
be used to manufacture high-power amplifiers that provide reliable
high-frequency performance and enhance signal transmission.
- LED Technology: In the field of semiconductor lighting, it can be used to
manufacture high-efficiency and high-reliability LED chips, improve
the luminous efficiency, and is widely used in liquid crystal
display backlight, landscape lighting, automotive lights and other
fields.
- Smart Grid: In high-voltage direct current (HVDC) transmission and grid
management, 4H-P silicon carbide substrates can be used to
manufacture efficient power devices, improve energy efficiency and
stability, and contribute to a more intelligent and reliable grid
system.
- Sensor: In the field of sensors, it can be used to manufacture
high-sensitivity and high-stability sensors, such as pressure
sensors, temperature sensors, etc., which are widely used in
automotive electronics, medical equipment, environmental monitoring
and other fields.
- Industrial Equipment: Equipment and instruments adapted to high temperature conditions,
such as high temperature furnace, heat treatment equipment, etc.,
improve the stability and service life of the equipment.
Sample display:
FAQ:
