Physical & Electronic Properties of SiC Compared to GaAa and Si
Wide Energy Bandgap (eV)
4H-SiC: 3.26 6H-SiC: 3.03 GaAs: 1.43 Si: 1.12
Electronic devices formed in SiC can operate at extremely high
temperatures without suffering from intrinsic conduction effects
because of the wide energy bandgap. Also, this property allows SiC
to emit and detect short wavelength light which makes the
fabrication of blue light emitting diodes and nearly solar blind UV
photodetectors possible.
High Breakdown Electric Field [V/cm (for 1000 V operation)]
4H-SiC: 2.2 x 106* 6H-SiC: 2.4 x 106* GaAs: 3 x 105 Si: 2.5 x 105
SiC can withstand a voltage gradient (or electric field) over eight
times greater than than Si or GaAs without undergoing avalanche
breakdown. This high breakdown electric field enables the
fabrication of very high-voltage, high-power devices such as
diodes, power transitors, power thyristors and surge suppressors,
as well as high power microwave devices. Additionally, it allows
the devices to be placed very close together, providing high device
packing density for integrated circuits.
High Thermal Conductivity (W/cm · K @ RT)
4H-SiC: 3.0-3.8 6H-SiC: 3.0-3.8 GaAs: 0.5 Si: 1.5
SiC is an excellent thermal conductor. Heat will flow more readily
through SiC than other semiconductor materials. In fact, at room
temperature, SiC has a higher thermal conductivity than any metal.
This property enables SiC devices to operate at extremely high
power levels and still dissipate the large amounts of excess heat
generated.
High Saturated Electron Drift Velocity [cm/sec (@ E ≥ 2 x 105
V/cm)]
4H-SiC: 2.0 x 107 6H-SiC: 2.0 x 107 GaAs: 1.0 x 107 Si: 1.0 x 107
SiC devices can operate at high frequencies (RF and microwave)
because of the high saturated electron drift velocity of SiC.
