AlN on Diamond template wafers AlN epitaxial films on Diamond
substrate AlN on Sapphire /AlN-on-SiC/ AlN-ON Silicon
Aluminum nitride (AlN) is one of the few non-metallic materials
with high thermal conductivity and has broad market application
prospects. Chemical Semiconductor Manufacturing Co., Ltd. has
realized to provide many customers with 2 inches/4 inches
diamond-based aluminum nitride film templates, 2 inches/4 inches
silicon-based aluminum nitride film templates, aluminum nitride
single crystal vapor deposition and other products, and can also be
based on application requirements. Carry out customized growth.
Advantages of AlN
• Direct band gap, band gap width of 6.2eV, is an important deep
ultraviolet and ultraviolet luminescent material
• High breakdown electric field strength, high thermal
conductivity, high insulation, low dielectric constant, low thermal
expansion coefficient, good mechanical performance, corrosion
resistance, commonly used in high temperature and high frequency
High power device
• Very good piezoelectric performance (especially along the
C-axis), which is one of the best materials for preparing various
sensors, drivers and filters
• It has very close lattice constant and thermal expansion
coefficient to GaN crystal, and is the preferred substrate material
for heteroepitaxial growth of GaN based optoelectronic devices.
Application advantages
• UVC LED substrate
Driven by the process cost and the requirements of high yield and
high uniformity, the substrate of AlGaN based UVC LED chip is of
large thickness, large size and suitable slope.Chamfered sapphire
substrates are a great choice. The thicker substrate can
effectively alleviate the abnormal distortion of epitaxial wafers
caused by stress concentration during epitaxy
The uniformity of epitaxial wafers can be improved; Larger
substrates can greatly reduce the edge effect and quickly reduce
the overall cost of the chip; Suitable chamfer angle can
To improve the surface morphology of the epitaxial layer, or
combine with the epitaxial technology to form the Ga rich carrier
localization effect in the active region of the quantum well, so as
to improve the luminous efficiency.
• Transition layer
Using AlN as buffer layer can significantly improve the epitaxial
quality, electrical and optical properties of GaN films. The
lattice mismatch between GaN and AIN substrate is 2.4%, the thermal
mismatch is almost zero, which can not only avoid the thermal
stress caused by high temperature growth, but also greatly improve
the production efficiency.
• Other applications
In addition, AlN thin films can be used for piezoelectric thin
films of surface acoustic wave devices (SAW), piezoelectric thin
films of bulk acoustic wave devices (FBAR), insulating buried
layers of SOI materials, and monochromatic cooling
Cathode materials (used for field emission displays and micro
vacuum tubes) and piezoelectric materials, high thermal
conductivity devices, acousto-optic devices, ultra ultraviolet and
X-ray detectors.
Empty collector electrode emission, dielectric material of MIS
device, protective layer of magneto-optical recording medium.
Three Major AlN Products
1. AlN-ON-Silicon
High quality aluminum nitride (AlN) thin films were successfully
prepared on silicon substrate by composite deposition. The half
peak width of the XRD (0002) rocking curve is less than 0.9 °, and
the surface roughness of the growth surface is Ra<
1.5nm (aluminum nitride thickness 200nm), high-quality aluminum
nitride film helps to realize the preparation of gallium nitride
(GaN) in large size, high quality and low cost.
Sapphire based AlN-On-Sapphire
High quality AlN on Sapphire (sapphire based aluminum nitride)
prepared by composite deposition, half peak width of XRD (0002)
swing curve<0.05 °, surface roughness of growth surface
Ra<1.2nm (aluminum nitride thickness is 200nm), which not only
realizes effective control of product quality, greatly improves
product quality, ensures product stability, but also greatly
reduces
The product cost and production cycle are reduced. The customer
verification shows that the high-quality AlN on Sapphire of CSMC
can greatly improve the yield and stability of UVC LED products
Qualitative, helping to improve product performance.
3. Diamond based AlN-On-Diamond
CVMC is the world's first, and innovatively develops diamond based
aluminum nitride. The half peak width of the XRD (0002) swing curve
is less than 3 °, and the diamond has ultra-high thermal
conductivity (the thermal conductivity at room temperature can
Up to 2000W/m K) The surface roughness of the growth surface Ra ＜
2nm (the thickness of aluminum nitride is 200nm), helping the new
application of aluminum nitride.
Specification Detail:
