8inch dia200mm 4H-N Production grade dummy grade SiC wafers
Production grade DUMMY grade SiC substrates, Silicon Carbide
substrates for a semiconductor device,
Application areas
1 high frequency and high power electronic devices Schottky diodes,
JFET, BJT, PiN, diodes, IGBT, MOSFET
2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate
material (GaN/SiC) LED
Advantagement
• Low lattice mismatch
• High thermal conductivity
• Low power consumption
• Excellent transient characteristics
• High band gap
Silicon Carbide SiC crystal substrate wafer carborundum
SILICON CARBIDE MATERIAL PROPERTIES
| Product Name: | Silicon carbide (SiC) crystal substrate |
| Product Description: | 2-6inch |
| Technical parameters: | | Cell structure | Hexagonal | | Lattice constant | a = 3.08 Å c = 15.08 Å | | Priorities | ABCACB (6H) | | Growth method | MOCVD | | Direction | Growth axis or Partial (0001) 3.5 ° | | Polishing | Si surface polishing | | Bandgap | 2.93 eV (indirect) | | Conductivity type | N or seimi ,high purity | | Resistivity | 0.076 ohm-cm | | Permittivity | e (11) = e (22) = 9.66 e (33) = 10.33 | | Thermal conductivity @ 300K | 5 W / cm. K | | Hardness | 9.2 Mohs |
|
| Specifications: | 6H N-type 4H N-type semi-insulating dia2 "x0.33mm, dia2"
x0.43mm,dia2''x1mmt, 10x10mm, 10x5mm Single throw or double throw,
Ra <10A |
| Standard Packaging: | 1000 clean room, 100 clean bag or single box packaging |
2. substrates size of standard
8inch diameter Silicon Carbide (SiC) Substrate Specification |
| Grade | | Production Grade | Research Grade | Dummy Grade |
| Diameter | 200.0 mm±0.5 mm |
| Thickness | 500 μm±25μm (or 1000um thickness also can be customzied produce ) |
| Wafer Orientation | Off axis : 4.0° toward <1120> ±0.5° for 4H-N |
| Micropipe Density | | ≤2 cm-2 | ≤10cm-2 | ≤50 cm-2 |
| Resistivity | 4H-N | 0.015~0.028 Ω•cm |
| |
| |
| Primary Flat and length | {1-100}±5.0° ,Notch |
| Secondary Flat Length | none |
| Secondary Flat Orientation | None |
| Edge exclusion | 3 mm |
| TTV/Bow /Warp | ≤10μm /≤25μm /≤30μm// ≤15μm /≤45μm /≤50μm// ≤20μm /≤65μm /≤70μm |
| Roughness | Polish Ra≤5 nm ,CMP Ra≤0.5 nm |
| Cracks by high intensity light | None | 1 allowed, ≤2 mm | N/A |
|
| Hex Plates by high intensity light | Cumulative area ≤1% | Cumulative area ≤1% | Cumulative area ≤3% |
| Polytype Areas by high intensity light | None | Cumulative area ≤10% | Cumulative area ≤30% |
| Scratches by high intensity light | 3 scratches to 1×wafer diameter cumulative length | 5 scratches to 1×wafer diameter cumulative length | 5 scratches to 1×wafer diameter cumulative length |
| edge chip | None | 3 allowed, ≤0.5 mm each | 5 allowed, ≤1 mm each |
| Contamination by high intensity light | None |
Sic wafer ＆ ingots 2-6inch and other customized size also can be
provided.
3.Pictures of delivery Products before
Q: What are your main products?
A:semiconductor wafers and Optical lens,mirrors,windows,filters,prisms
Q: How long is your delivery time?
A: In general delivery time is about one month for custom produced
optics.except stock ones or some special optics.
Q: Do you provide samples ? is it free or extra ?
A: We can provide free samples if we have stock optics as your
request,while custom produced samples are not free.
Q:What is your MOQ ?
MOQ is 10pcs for most of wafer or lens , while MOQ could be only
one piece if you need a element in big dimention.
Q: What is your terms of payment ?
T/T,L/C,VISA,Paypal,Alipay or Negotiation.
