4inch 6inch GaN-ON-SiC EPI layer wafers GaN-ON-Si EPI layer wafers
About GaN-on-GaN GaN-on-SIC Feature Introduce
GaN epitaxial wafer: According to the different substrates, it is
mainly divided into four types: GaN-on-Si, GaN-on-SiC,
GaN-on-sapphire, and GaN-on-GaN.
GaN-on-Si: The current industry production yield is low, but there
is a huge potential for cost reduction: because Si is the most
mature, defect-free, and lowest-cost substrate material; at the
same time, Si can be expanded to 8-inch wafer fabs , reduce the
unit production cost, so that the wafer cost is only one percent of
that of the SiC base; the growth rate of Si is 200 to 300 times
that of the SiC crystal material, and the corresponding fab
equipment depreciation and energy consumption difference in cost,
etc. GaN-on-Si epitaxial wafers are mainly used in the manufacture
of power electronic devices, and the technical trend is to optimize
large-scale epitaxy technology.
GaN-on-SiC: Combining the excellent thermal conductivity of SiC
with the high power density and low loss capabilities of GaN, it is
a suitable material for RF. Limited by the SiC substrate, the
current size is still limited to 4 inches and 6 inches, and 8
inches has not been promoted. GaN-on-SiC epitaxial wafers are
mainly used to manufacture microwave radio frequency devices.
GaN-on-sapphire: Mainly used in the LED market, the mainstream size
is 4 inches, and the market share of GaN LED chips on sapphire
substrates has reached more than 90%.
GaN-on-GaN: The main application market of GaN using homogenous
substrates is blue/green lasers, which are used in laser display,
laser storage, laser lighting and other fields.
GaN device design and manufacturing: GaN devices are divided into
radio frequency devices and power electronic devices. Radio
frequency device products include PA, LNA, switches, MMICs, etc.,
which are oriented to base station satellite, radar and other
markets; power electronic device products include SBD, normally-off
FET. , Normally-on FET, Cascode FET and other products for wireless
charging, power switch, envelope tracking, inverter, converter and
other markets.
According to the process, it is divided into two categories: HEMT,
HBT radio frequency process and SBD, PowerFET power electronic
device process.
Applications
- - Various LED's: white LED, violet LED, ultraviolet LED, blue LED
- - Environmental detection
- Substrates for epitaxial growth by MOCVD etc
- - Laser diodes: violet LD, green LD for ultra small projectors.
- - Power electronic devices
- - High frequency electronic devices
- Laser Projection Display, Power Device, etc.
- Date storage
- Energy-efficient lighting
- High- Efficiency Electronic devices
- New energy solor hydrogen technology
- Light source terahertz band
Specifications for GaN-on-GaN Substrates for Each Grade
| 4-6”GaN ON-SIC |
| Item | Type: N-type SIC |
| Dimensions size | Ф 100.0mm ± 0.5mm |
| Thickness of Substrate | 350 ± 30 µm |
| Orientation of Substrate | 4°off C-axis(0001) |
| Polish | DSP |
| Ra | <0.2nm |
| Epilyaer structure | 0.5um pGaN/20um iGaN/2um nGaN/FS-GaN |
| Epi thickness/STD | 1~25um/<3% |
| Roughness | <0.5nm |
| Discolation density | <1X107cm-2 |
| pGaN Carrier concentration | >1E17CM-3; |
| iGaN Carrier concentration | > 1E17CM-3; |
| nGaN Carrier concentration | >1E17CM-3; |
|
| Useable area | P level>90%; R level>80%: Dlevel>70%(edge and macro
defects exclusion) |
Our services
1. Factory direct manufacture and sell.
2. Fast, accurate quotes.
3. Reply to you within 24 working hours.
4. ODM: Customized design is avaliable.
5. Speed and precious delivery.
FAQ
Q: Is there any stock or standard product?
A: Yes, commen size as like2inch 0.3mm standard size always in
stocks.
Q: How about the samples policy?
A: sorry, but suggest you can buy some 10x10mm size back for test
firstly.
Q: If i place an order now ,how long would it be before i got
delivery ?
A: standard size in stock in 1weeks can be expressed after payment.
and our payment term is 50％ deposit and left before delivery.
