2inch 4inch 6inch GaN-ON-sapphire Blue led epi-wafer PSS for HEMT
As a leading manufacturer and supplier of GaN (Gallium Nitride) epi
wafers, we offer 2-6inch GaN on sapphire epi wafers for microwave
electronics applications with a thickness of 2 on C-plane sapphire
substrates 430um inch, 4 inch 520um, 650um and 6 inch 1000-1300um,
the normal value of GaN buffer layer is 2-4um; we can also provide
customized structures and parameters according to customer
requirements.
GaN on Sapphire Templates
GaN on sapphire templates are available in diameters from 2" up to
6" and consist of a thin layer of crystalline GaN grown by HVPE on
a sapphire substrate. Epi-ready templates now available
As a leading manufacturer and supplier of GaN (Gallium Nitride) epi
wafers, we offer 2-6inch GaN on sapphire epi wafers for microwave
electronics applications with a thickness of 2 on C-plane sapphire
substrates 430um inch, 4 inch 520um, 650um and 6 inch 1000-1300um,
the normal value of GaN buffer layer is 2-4um; we can also provide
customized structures and parameters according to customer
requirements.
ZMSH is committed to produce high quality Blue LED epi-wafers on
planar
sapphire substrates and Pattern Sapphire Substrates (PSS) with
wafer size from 2 inch to 6 inch.
The wafer quality meets the following specs:
Main features (blue/green LED structure):
good crystal quality
High-performance optoelectronic devices
For more information, please visit our website other page;
send us email at eric-wang@galliumnitridewafer.com
ZMSH is a leading manufacturer of semiconductor material in China.
ZMSH develops advanced crystal growth and epitaxy technologies,
manufacturing processes, engineered substrates and semiconductor
devices. Our technologies enable higher performance and lower cost
manufacturing of semiconductor wafer.
You can get our free technology service from enquiry to after
service based on our 10+ experiences in semiconductor line.
