4H-N 4H-SEMI 2inch 3inch 4inch 6Inch SiC Substrate Production grade
dummy grade for High-Power Devices
H High Purity Silicon Carbide Substrates,high purity 4inch SiC
substrates ,4inch Silicon Carbide substrates for semiconductor,
Silicon Carbide substrates for semconductor ,sic single crystal
wafers ,sic ingots for gem
Application areas
1 high frequency and high power electronic devices Schottky diodes,
JFET, BJT, PiN, diodes, IGBT, MOSFET
2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate
material (GaN/SiC) LED
advantagement
• Low lattice mismatch
• High thermal conductivity
• Low power consumption
• Excellent transient characteristics
• High band gap
Silicon Carbide SiC crystal substrate wafer carborundum
4H-N and 4H-SEMI SiC (Silicon Carbide) substrates, available in a
range of diameters such as 2-inch, 3-inch, 4-inch, and 6-inch, are
widely utilized for the fabrication of high-power devices due to
their superior material properties. Here are the key properties of
these SiC substrates, making them ideal for high-power
applications:
Wide Bandgap: 4H-SiC has a wide bandgap of about 3.26 eV, which allows it to
operate efficiently at higher temperatures, voltages, and
frequencies compared to traditional semiconductor materials like
silicon.
High Breakdown Electric Field: SiC's high breakdown electric field (up to 2.8 MV/cm) enables
devices to handle higher voltages without breakdown, making it
essential for power electronics such as MOSFETs and IGBTs.
Excellent Thermal Conductivity: SiC has a thermal conductivity around 3.7 W/cm·K, significantly
higher than silicon, allowing it to dissipate heat more
effectively. This is crucial for devices in high-temperature
environments.
High Saturation Electron Velocity: SiC offers a high electron saturation velocity, enhancing the
performance of high-frequency devices, which are used in
applications such as radar systems and 5G communication.
Mechanical Strength and Hardness: The hardness and robustness of SiC substrates ensure long-term
durability, even in extreme operating conditions, making them
highly suitable for industrial-grade devices.
Low Defect Density: Production-grade SiC substrates are characterized by low defect
densities, ensuring optimal device performance, whereas dummy-grade
substrates may have a higher defect density, suitable for testing
and equipment calibration purposes.
These properties make 4H-N and 4H-SEMI SiC substrates indispensable
in the development of high-performance power devices used in
electric vehicles, renewable energy systems, and aerospace
applications.
SILICON CARBIDE MATERIAL PROPERTIES
| Property | 4H-SiC, Single Crystal | 6H-SiC, Single Crystal |
| Lattice Parameters | a=3.076 Å c=10.053 Å | a=3.073 Å c=15.117 Å |
| Stacking Sequence | ABCB | ABCACB |
| Mohs Hardness | ≈9.2 | ≈9.2 |
| Density | 3.21 g/cm3 | 3.21 g/cm3 |
| Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K |
| Refraction Index @750nm | no = 2.61 ne = 2.66 | no = 2.60 ne = 2.65 |
| Dielectric Constant | c~9.66 | c~9.66 |
| Thermal Conductivity (N-type, 0.02 ohm.cm) | a~4.2 W/cm·K@298K c~3.7 W/cm·K@298K | |
| Thermal Conductivity (Semi-insulating) | a~4.9 W/cm·K@298K c~3.9 W/cm·K@298K | a~4.6 W/cm·K@298K c~3.2 W/cm·K@298K |
| Band-gap | 3.23 eV | 3.02 eV |
| Break-Down Electrical Field | 3-5×106V/cm | 3-5×106V/cm |
| Saturation Drift Velocity | 2.0×105m/s | 2.0×105m/s |
2. substrates size of standard for 6inch
| 6 inch Diameter 4H-N &Semi Silicon Carbide Substrate
Specifications |
| SUBSTRATE PROPERTY | Zero Grade | Production Grade | Research Grade | Dummy Grade |
|
| Diameter | 150 mm-0.05 mm |
|
| Surface Orientation | off-axis: 4°toward <11-20> ± 0.5° for 4H-NOn axis: <0001>±0.5°for 4H-SI |
|
| Primary Flat Orientation | {10-10} ±5.0° for 4H-N/ Notch for 4H-Semi |
|
| Primary Flat Length | 47.5 mm ± 2.5 mm |
|
| Thickness 4H-N | STD 350±25um or customzied 500±25um |
|
| Thickness 4H-SEMI | 500±25um STD |
|
| Wafer Edge | Chamfer |
|
| Micropipe Density For 4H-N | <0.5 micropipes/ cm2 | ≤2micropipes/ cm2 | ≤10 micropipes/ cm2 | ≤15 micropipes/ cm2
|
|
| Micropipe Density For 4H-SEMI | <1 micropipes/ cm2 | ≤5micropipes/ cm2 | ≤10 micropipes/ cm2 | ≤20 micropipes/ cm2 |
| Polytype areas by high-intensity light | None permitted | ≤10% area |
|
| Resistivity for 4H-N | 0.015 Ω·cm~0.028 Ω·cm | (area 75%)0.015Ω·cm~0.028 Ω·cm |
|
| Resistivity for 4H-SEMI | | |
|
| LTV/TTV/BOW/WARP | ≤3 μm/≤6 μm/≤30 μm/≤40 μm | ≤5 μm/≤15 μm/≤40 μm/≤60 μm |
|
Hex Plates By High Intensity Ligh | | |
|
Silicon Surface Contamination by High Intensity Light | |
|
Visual Carbon Inclusions
| Cumulative area ≤0.05% | |
Polytype Areas By High Intensity Light
| NONE | |
Delivery Sample
The Other Services we can provide
1.Customized thickness wire-cut 2. customized size chip slice 3.
cuotomized shape lens
The Other Similar Products we can provide
FAQ:
Q: What's the wayof shipping and cost and pay term ?
A:(1) We accept 50％ T/T In advance and left 50% before delivery by
DHL, Fedex, EMS etc.
(2) If you have your own express account, it's great.If not,we
could help you ship them.
Freight is in accordance with the actual settlement.
Q: What's your MOQ?
A: (1) For inventory, the MOQ is 3pcs.
(2) For customized products, the MOQ is 10pcs up.
Q: Can I customize the products based on my need?
A: Yes, we can customize the material, specifications and shape,
size based on your needs.
Q: What's the delivery time?
A: (1) For the standard products
For inventory: the delivery is 5 workdays after you place the
order.
For customized products: the delivery is 2 or 3 weeks after you
place the order.
(2) For the special-shaped products, the delivery is 4 workweeks
after you place the order.
