Product Description:
From the perspective of terminal application layer, silicon carbide
materials have a wide range of applications in high-speed rail,
automotive electronics, smart grids, photovoltaic inverters,
industrial electromechanical, data centers, white goods, consumer
electronics, 5G communication, next-generation displays, and other
fields, with huge market potential.
In terms of application, it is divided into low voltage, medium
voltage, and high voltage fields:
Low voltage field
Mainly targeting some consumer electronics, such as PFC and power
supply; For example, Xiaomi and Huawei have launched fast chargers
using gallium nitride devices.
Medium voltage field
Mainly in automotive electronics and rail transit and power grid
systems with a voltage of over 3300V. For example, Tesla was the
earliest automotive manufacturer to use silicon carbide devices,
using the model 3.
In the field of medium and low voltage, silicon carbide has very
mature diodes and MOSFET products that are being promoted and
applied in the market.
High voltage field
Silicon carbide has unique advantages. But so far, there has not
been a mature product launched in the high-voltage field, and the
world is in the stage of research and development.
Electric vehicles are the best application scenario for silicon
carbide. Toyota's electric drive module (the core component of
electric vehicles) reduces the volume of silicon carbide devices by
50% or more compared to silicon based IGBTs, and the energy density
is also much higher than that of silicon based IGBTs. This is also
the reason why many manufacturers tend to use silicon carbide,
which can optimize the layout of components in the car and save
more space.
Features:
Silicon Carbide is an incredibly hard and versatile substrate,
offering numerous advantages over traditional silicon substrates.
One of the major advantages of silicon carbide is its hardness.
Thismaterial can transfer heat from one point to another well,
allowing it to improve its electrical conductivity and enable
miniaturization in many applications. Silicon carbide wafers also
have a low coefficient for thermal expansion, meaning they do not
change significantly in size or shape as they are heated or cooled.
In addition, silicon carbide substrates are highly resistant to
thermal shock, and can change temperatures rapidly without breaking
or cracking.
Silicon carbide is a very durable material which does not react
with acids, alkalis or molten salts at temperatures up to 800°C. It
is also strong enough to safely operate at temperatures over
1600°C, making it suitable for high temperature applications.
Technical Parameters:
4H-SiC* and 6H-SiC** have various sizes ranging from 50.8mm (2") to
200mm (8 inch). With respect to type and dopant, they are both of
the N/Nitrogen and intrinsic/ HPSI type. 4H-SiC* has a resistivity
range of 0.015 - 0.028 ohm*cm whereas 6H-SiC** has a much larger
resistivity of >1E7 ohm*cm. The thickness of both ranges from
250um to 15,000um (15mm) and they both have a single/double side
polished surface finish. Stacking sequence of 4H-SiC* follows ABCB
while that of 6H-SiC** follows ABCACB. The dielectric constant of
4H-SiC* is 9.6 and that of 6H-SiC** is 9.66. As for electron
mobility, 4H-SiC* has a score of 800 cm2/V*S while 6H-SiC** is
slightly lower at 400 cm2/V*S. Last but not least, their densities
are the same at 3.21 · 103 kg/m3.
Applications:
ZMSH SIC010 SiC Substrate is a high-precision custom size plates
for various applications. It is made of silicon carbide (SiC)
material, with a dielectric constant of 9.7, an extremely low
surface roughness of Ra<0.5nm, and a high breakdown voltage of
5.5 MV/cm. This product has an incredibly high compressive strength
of >1000MPa, making it ideal for uses with extreme precision and
demanding conditions. It is perfect for laser cutting, as it can
maintain a high level of accuracy and quality. It is certified RoHS
compliant and is available in minimum order quantities of 10
pieces. The price is determined on a case-by-case basis, with
custom plastic boxes for packaging. Delivery time is 30 days and
payment is accepted via T/T. ZMSH is able to supply up to 1000
pieces per month.
Customization:
Customized SiC Substrate
Brand Name: ZMSH
Model Number: SIC010
Place of Origin: CHINA
Certification: ROHS
Minimum Order Quantity: 10PC
Price: By case
Packaging Details: Customized plastic box
Delivery Time: In 30 days
Payment Terms: T/T
Supply Ability: 1000PC/month
Dopant: N/A
Material: SiC Monocrystal
Surface Hardness: HV0.3 > 2500
Tensile Strength: > 400MPa
Surface: Si-face CMP; C-face MP
Highlight:
Silicon Carbide Wafers, 4H-N SIC Wafers, Customized Size SiC Chips
Support and Services:
SiC Substrate Technical Support and Services
We are committed to providing our customers with the best technical
support and services for SiC Substrate products. Our knowledgeable
staff is always available to answer questions and provide guidance.
We strive to ensure that our customers have access to the most
up-to-date information and resources to assist them in making
informed decisions. We also provide a variety of services, such as
design assistance, prototyping, customization, and more.
Our team of experts is always available to provide technical
support and advice. We understand the importance of product
performance and reliability and will work with our customers to
ensure that their needs are met. We also provide training and
education on the use of SiC Substrate products.
We are dedicated to providing the highest level of service and
support for our customers. Our goal is to make sure that our
customers have a positive experience and are satisfied with our
products and services.
