6inch Sapphire Wafer Orientation 0001 Al2O3 Single Crystal
4inch Sapphire Wafer C-Plane Single or Double Side Polished Al2O3
Single Crystal
4inch Dia100mm A plane Single Crystal Sapphire Wafer
2inch Dia50mm C axis Single Crystal Sapphire Wafer Sapphire
Substrates
8inch Dia 159mm Single Crystal Sapphire Wafer For Epi - Ready
Carrier
4inch/ 5inch/ 6inch/ 6.125inch/8inch c-plane R-axis (1-102) (10-10)
sapphire wafer,dia200mm sapphire substrates ,2-6inch C-axis double
side polished sapphire wafer for led epi-ready,sapphire substrates,
Al2O3 crystal optical lens, Double Side Polished SSP Surface 8"
Sapphire Carrier
Orientation
- R-axis (10-12)
- C-axis (0001)
- A-axis (11-20)
- M-axis (11-10)
A-Plane sapphire substrates - are usually used for hybrid
microelectronic applications requiring a uniform dielectric
constant and highly insulating characteristics.
C-Plane substrates - tend to be used for lll-V and ll-Vl compounds,
such as GaN, for bright blue and green LED and laser diodes.
R-Plane substrates - these are preferred for the hetero-epitaxial
deposition of silicon used in microelectronic IC applications.
Feature
- All orientations are available, custom orientation is welcome
- Wafer size from 2 to 6 inches are available for all types
- Thin wafer down to 250um for 2 inch, 300um for 4 inch and 300um for
6 inch
Specifications of Sapphire Wafer, 6 inch, C-plane (0001), Prime Grade
| Material | High Purity, >99.99%, single crystal Al2O3 |
| Dimension | 150.0 mm +/- 0.05 mm |
| Thickness | 1300 um +/- 25 um (SSP) , 600 um +/- 25 um (DSP) |
| Orientation | C plane (0001) off M (1-100) plane 0.2 +/- 0.05 degree |
| Primary flat orientation | A-plane +/- 1 degree |
| Total Thickness Variation (TTV) | <20um |
| Bow | <25um |
| Warp | <25um |
| Thermal Expansion Coefficient | 6.66 x 10-6 / °C parallel to C axis, 5 x 10-6 /°C |
| Dielectric Strength | 4.8 x 105 V/cm |
| Dielectric Constant | 11.5 (1 MHz) along C axis, 9.3 (1 MHz) perpendicular to C axis |
| Dielectric Loss Tangent (a.k.a. dissipation factor) | less than 1 x 10-4 |
Transmittance: | 88% +/-1 % @460 nm |
Electrical Properties of Sapphire
Resistivity, Ohm x cm at 200-500 °C: 1011- 1016
Dielectric constant: 10.0
Dielectric strength, V/cm: 4 x 105
Loss tangent: 1 x 10-4
Application
- Growth substrate for III-V and II-VI compounds
- Electronics and optoelectronics
- IR applications
- Silicon On Sapphire Integrated Circuit(SOS)
- Radio Frequency Integrated Circuit(RFIC)
Product display
Packing of sapphire wafers
FAQ:
Q: What's your MOQ?
A: (1) For inventory, the MOQ is 10pcs.
(2) For customized products, the MOQ is 25pcs up.
Q: What's the way of shipping and cost?
A:(1) We accept DHL, Fedex, EMS etc.
(2) If you have your own express account, it's great.If not,we
could help you ship them.
Freight is in accordance with the actual settlement.
Q: What's the delivery time?
For inventory: the delivery is 5 workdays after you place the
order.
For customized products: the delivery is 2 or 3 weeks after you
place the order.
Q: Do you have standard products?
A: Our standard products in stock.as like 4inch 0.65mm,0.5mm
polished wafer.
Q: How to pay?
A:50％deposit, left before delivery T/T,
Q: Can I customize the products based on my need?
A: Yes, we can customize the material, specifications and optical
coating for your optical
components based on your needs.
