2inch Silicon Carbide Wafers 6H or 4H-N type or Semi-Insulating SiC
Substrates
4H-N Type / Semi Insulating SiC Substrates 2inch 3inch 6inch
Silicon Carbide Wafers
What is a sic wafer
A SiC wafer is a semiconductor material that has excellent
electrical and thermal properties. It is a high-performance
semiconductor that is ideal for a wide variety of applications. In
addition to its high thermal resistance, it also features a very
high level of hardness.
Silicon carbide SiC substrates can be divided into two categories:
semi-insulated (High Purity un-dopend and V-doped 4H-SEMI) silicon
carbide substrates with high resistivity (resistorivity ≥107Ω·cm),
and conductive silicon carbide substrates with low resistivity (the
resistivity range is 15-30mΩ·cm).
Specification for 6inch 4H-N sic wafers .
(2inch,3inch 4inch ,8inch sic wafer also is available)
| Grade | Zero MPD Production Grade (Z Grade) | Standard Production Grade (P Grade) | Dummy Grade (D Grade) |
![customized 4H-N Type Semi-Insulating SiC Substrates 4inch 6inch Silicon Carbide Wafers]() Diameter | 99.5 mm~100.0 mm |
![customized 4H-N Type Semi-Insulating SiC Substrates 4inch 6inch Silicon Carbide Wafers]() Thickness | 4H-N | 350 μm±20 μm | 350 μm±25 μm |
| 4H-SI | 500 μm±20 μm | 500 μm±25 μm |
| Wafer Orientation | ![customized 4H-N Type Semi-Insulating SiC Substrates 4inch 6inch Silicon Carbide Wafers]() Off axis: 4.0°toward <1120 > ±0.5°for 4H-N, On axis:
<0001>±0.5°for 4H-SI |
| Micropipe Density | 4H-N | ≤0.5cm-2 | ≤2 cm-2 | ≤15 cm-2 |
| 4H-SI | ≤1cm-2 | ≤5 cm-2 | ≤15 cm-2 |
| ※ Resistivity | 4H-N | 0.015~0.025 Ω·cm | 0.015~0.028 Ω·cm |
| 4H-SI | ≥1E9 Ω·cm | ≥1E5 Ω·cm |
| Primary Flat Orientation | {10-10} ±5.0° |
| Primary Flat Length | 32.5 mm±2.0 mm |
| Secondary Flat Length | 18.0 mm±2.0 mm |
| Secondary Flat Orientation | Silicon face up: 90°CW. from Prime flat ±5.0° |
| Edge Exclusion | 3 mm |
| LTV/TTV/Bow /Warp | ≤3 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm/≤15 μm/≤25 μm/≤40 μm |
※ Roughness | Polish Ra≤1 nm |
| CMP Ra≤0.2 nm | Ra≤0.5 nm |
Edge Cracks By High Intensity Light
| None | Cumulative length ≤ 10 mm, single length≤2 mm |
| Hex Plates By High Intensity Light | Cumulative area ≤0.05% | Cumulative area ≤0.1% |
Polytype Areas By High Intensity Light ![customized 4H-N Type Semi-Insulating SiC Substrates 4inch 6inch Silicon Carbide Wafers]() | None | Cumulative area≤3% |
| Visual Carbon Inclusions | Cumulative area ≤0.05% | Cumulative area ≤3% |
Silicon Surface Scratches By High Intensity Light | None | Cumulative len`gth≤1×wafer diameter |
| Edge Chips High By Intensity Light | None permitted ≥0.2 mm width and depth | 5 allowed, ≤1 mm each |
Silicon Surface Contamination By High Intensity | None |
![customized 4H-N Type Semi-Insulating SiC Substrates 4inch 6inch Silicon Carbide Wafers]() Packaging | Multi-wafer Cassette or Single Wafer Container |
Industrial chain
The silicon carbide SiC industrial chain is divided into substrate
material preparation, epitaxial layer growth, device manufacturing
and downstream applications. Silicon carbide monocrystals are
usually prepared by physical vapor transmission (PVT method), and
then epitaxial sheets are generated by chemical vapor deposition
(CVD method) on the substrate, and the relevant devices are finally
made. In the industrial chain of SiC devices, due to the difficulty
of substrate manufacturing technology, the value of the industrial
chain is mainly concentrated in the upstream substrate link.
ZMSH company provides provides 100mm and 150mm SiC wafers. With its
hardness (SiC is the second hardest material in the world) and
stability under heat and high voltage current, this material is
being widely used in several industries.
Price
ZMSH company offers the best price on the market for high quality
SiC wafers and SiC crystal substrates up to six (6) inch diameter.
Our price matching policy guarantees you the best price for the SiC
crystal products with comparable specifications.
CONTACT US today to get your quote.
Customization
Customized SiC crystal products can be made to meet customer's
particular requirements and specifications.
Epi-wafers can also be custom made upon request.
FAQ
Q: What's the wayof shipping and cost and pay term ?
A:(1) We accept 50％ T/T In advance and left 50% before delivery by
DHL, Fedex, EMS etc.
(2) If you have your own express account, it's great.If not,we
could help you ship them.
Freight is in accordance with the actual settlement.
Q: What's your MOQ?
A: (1) For inventory, the MOQ is 3pcs.
(2) For customized products, the MOQ is 10pcs up.
Q: Can I customize the products based on my need?
A: Yes, we can customize the material, specifications and shape,
size based on your needs.
Q: What's the delivery time?
A: (1) For the standard products
For inventory: the delivery is 5 workdays after you place the
order.
For customized products: the delivery is 2 or 3 weeks after you
place the order.
(2) For the special-shaped products, the delivery is 4 workweeks
after you place the order.
