4inch 6inch 4H-N sic wafers dummy Prime Production grade for SBD
MOS Device,4H-N 4inch 6inch Sic Wafers Semiconductor High Crystal
Quality For Demanding Power Electronics, 4H-N 8inch TANKBLUE Brand
Semiconductor Substrate SIC Silicon Carbide Wafer For Solar
Photovoltaic, 8inch Silicon Carbide Substrate Production Grade N
Type 4H SiC Wafer For Research And Experiment
Wafer Dopings:
- Undoped
- Boron (B)
- Gallium (Ga)
- Arsenic (As)
- Antimony (Sb)
- Degenerately Doped
Wafer Types
8" Silicon Wafer Orientations
- (100)
- (111)
- (110)
- (112)
- (531)
- (311)
- (211)
Advantages of Silicon Carbide
There are numerous advantages to using silicon carbide over more
traditional silicon substrates. One of the major advantages is its
hardness. This gives the material many advantages, in high speed,
high temperature and/or high voltage applications.
Silicon carbide wafers have high thermal conductivity, which means
they can transfer heat from one point to another well. This
improves its electrical conductivity and ultimately
miniaturization, one of the common goals of switching to SiC
wafers.
High resistance to thermal shock. This means they have the
ability to change temperatures rapidly without breaking or
cracking. This creates a clear advantage when fabricating devices
as it is another toughness characteristic that improves the
lifetime and performance of silicon carbide in comparison to
traditional bulk silicon.
Classification
Silicon carbide SiC substrates can be divided into two categories:
semi-insulated (High Purity un-dopend and V-doped 4H-SEMI) silicon
carbide substrates with high resistivity (resistorivity ≥107Ω·cm),
and conductive silicon carbide substrates with low resistivity (the
resistivity range is 15-30mΩ·cm).
Specification
Size: | 8inch; |
Diameter: | 200mm±0.2; |
Thickness: | 500um±25; |
Surface Orientation: | 4 toward [11-20]±0.5°; |
Notch orientation: | [1-100]±1°； |
Notch depth: | 1±0.25mm； |
Micropipe: | <1cm2; |
Hex Plates: | None Permitted; |
Resistivity: | 0.015~0.028Ω; |
EPD: | <8000cm2; |
TED: | <6000cm2 |
BPD: | <2000cm2 |
TSD: | <1000cm2 |
SF: | area<1% |
TTV | ≤15um； |
Warp | ≤40um； |
Bow | ≤25um； |
Poly areas: | ≤5%; |
Related products: GaAs wafer
Industrial chain
The silicon carbide SiC industrial chain is divided into substrate
material preparation, epitaxial layer growth, device manufacturing
and downstream applications. Silicon carbide monocrystals are
usually prepared by physical vapor transmission (PVT method), and
then epitaxial sheets are generated by chemical vapor deposition
(CVD method) on the substrate, and the relevant devices are finally
made. In the industrial chain of SiC devices, due to the difficulty
of substrate manufacturing technology, the value of the industrial
chain is mainly concentrated in the upstream substrate link.
ZMSH company provides provides 100mm and 150mm SiC wafers. With its
hardness (SiC is the second hardest material in the world) and
stability under heat and high voltage current, this material is
being widely used in several industries.
FAQ
Q: What's the wayof shipping and cost and pay term ?
A:(1) We accept 50％ T/T In advance and left 50% before delivery by
DHL, Fedex, EMS etc.
(2) If you have your own express account, it's great.If not,we
could help you ship them.
Freight is in accordance with the actual settlement.
Q: What's your MOQ?
A: (1) For inventory, the MOQ is 3pcs.
(2) For customized products, the MOQ is 10pcs up.
Q: Can I customize the products based on my need?
A: Yes, we can customize the material, specifications and shape,
size based on your needs.
Q: What's the delivery time?
A: (1) For the standard products
For inventory: the delivery is 5 workdays after you place the
order.
For customized products: the delivery is 2 or 3 weeks after you
place the order.
(2) For the special-shaped products, the delivery is 4 workweeks
after you place the order.
