2inch Silicon Carbide Wafers 6H or 4H N-type or Semi-Insulating SiC
Substrates
Advantages of Silicon Carbide
There are numerous advantages to using silicon carbide over more
traditional silicon substrates. One of the major advantages is its
hardness. This gives the material many advantages, in high speed,
high temperature and/or high voltage applications.
Silicon carbide wafers have high thermal conductivity, which means
they can transfer heat from one point to another well. This
improves its electrical conductivity and ultimately
miniaturization, one of the common goals of switching to SiC
wafers.
High resistance to thermal shock. This means they have the
ability to change temperatures rapidly without breaking or
cracking. This creates a clear advantage when fabricating devices
as it is another toughness characteristic that improves the
lifetime and performance of silicon carbide in comparison to
traditional bulk silicon.
Classification
Silicon carbide SiC substrates can be divided into two categories:
semi-insulated (High Purity un-dopend and V-doped 4H-SEMI) silicon
carbide substrates with high resistivity (resistorivity ≥107Ω·cm),
and conductive silicon carbide substrates with low resistivity (the
resistivity range is 15-30mΩ·cm).
Specification for 6inch 4H-N sic wafers .
(2inch,3inch 4inch ,8inch sic wafer also is available)
| Grade | Zero MPD Production Grade (Z Grade) | Standard Production Grade (P Grade) | Dummy Grade (D Grade) |
![2Inch Silicon Carbide Wafers 6H Or 4H N-Type Or Semi-Insulating SiC Substrates]() Diameter | 99.5 mm~100.0 mm |
![2Inch Silicon Carbide Wafers 6H Or 4H N-Type Or Semi-Insulating SiC Substrates]() Thickness | 4H-N | 350 μm±20 μm | 350 μm±25 μm |
| 4H-SI | 500 μm±20 μm | 500 μm±25 μm |
| Wafer Orientation | ![2Inch Silicon Carbide Wafers 6H Or 4H N-Type Or Semi-Insulating SiC Substrates]() Off axis: 4.0°toward <1120 > ±0.5°for 4H-N, On axis:
<0001>±0.5°for 4H-SI |
| Micropipe Density | 4H-N | ≤0.5cm-2 | ≤2 cm-2 | ≤15 cm-2 |
| 4H-SI | ≤1cm-2 | ≤5 cm-2 | ≤15 cm-2 |
| ※ Resistivity | 4H-N | 0.015~0.025 Ω·cm | 0.015~0.028 Ω·cm |
| 4H-SI | ≥1E9 Ω·cm | ≥1E5 Ω·cm |
| Primary Flat Orientation | {10-10} ±5.0° |
| Primary Flat Length | 32.5 mm±2.0 mm |
| Secondary Flat Length | 18.0 mm±2.0 mm |
| Secondary Flat Orientation | Silicon face up: 90°CW. from Prime flat ±5.0° |
| Edge Exclusion | 3 mm |
| LTV/TTV/Bow /Warp | ≤3 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm/≤15 μm/≤25 μm/≤40 μm |
※ Roughness | Polish Ra≤1 nm |
| CMP Ra≤0.2 nm | Ra≤0.5 nm |
Edge Cracks By High Intensity Light
| None | Cumulative length ≤ 10 mm, single length≤2 mm |
| Hex Plates By High Intensity Light | Cumulative area ≤0.05% | Cumulative area ≤0.1% |
Polytype Areas By High Intensity Light ![2Inch Silicon Carbide Wafers 6H Or 4H N-Type Or Semi-Insulating SiC Substrates]() | None | Cumulative area≤3% |
| Visual Carbon Inclusions | Cumulative area ≤0.05% | Cumulative area ≤3% |
Silicon Surface Scratches By High Intensity Light | None | Cumulative len`gth≤1×wafer diameter |
| Edge Chips High By Intensity Light | None permitted ≥0.2 mm width and depth | 5 allowed, ≤1 mm each |
Silicon Surface Contamination By High Intensity | None |
![2Inch Silicon Carbide Wafers 6H Or 4H N-Type Or Semi-Insulating SiC Substrates]() Packaging | Multi-wafer Cassette or Single Wafer Container |
Industrial chain
The silicon carbide SiC industrial chain is divided into substrate
material preparation, epitaxial layer growth, device manufacturing
and downstream applications. Silicon carbide monocrystals are
usually prepared by physical vapor transmission (PVT method), and
then epitaxial sheets are generated by chemical vapor deposition
(CVD method) on the substrate, and the relevant devices are finally
made. In the industrial chain of SiC devices, due to the difficulty
of substrate manufacturing technology, the value of the industrial
chain is mainly concentrated in the upstream substrate link.
ZMSH company provides provides 100mm and 150mm SiC wafers. With its
hardness (SiC is the second hardest material in the world) and
stability under heat and high voltage current, this material is
being widely used in several industries.
Price
ZMSH company offers the best price on the market for high quality
SiC wafers and SiC crystal substrates up to six (6) inch diameter.
Our price matching policy guarantees you the best price for the SiC
crystal products with comparable specifications.
CONTACT US today to get your quote.
Customization
Customized SiC crystal products can be made to meet customer's
particular requirements and specifications.
Epi-wafers can also be custom made upon request.
FAQ
Q: What's the wayof shipping and cost and pay term ?
A:(1) We accept 50％ T/T In advance and left 50% before delivery by
DHL, Fedex, EMS etc.
(2) If you have your own express account, it's great.If not,we
could help you ship them.
Freight is in accordance with the actual settlement.
Q: What's your MOQ?
A: (1) For inventory, the MOQ is 3pcs.
(2) For customized products, the MOQ is 10pcs up.
Q: Can I customize the products based on my need?
A: Yes, we can customize the material, specifications and shape,
size based on your needs.
Q: What's the delivery time?
A: (1) For the standard products
For inventory: the delivery is 5 workdays after you place the
order.
For customized products: the delivery is 2 or 3 weeks after you
place the order.
(2) For the special-shaped products, the delivery is 4 workweeks
after you place the order.
