2” S Dopped GaP Semiconductor EPI Wafer N Type P Type 250um 300um
Light-Emitting Diodes
Description:
Gallium phosphide (GaP) is a group Ⅲ-V compound. The appearance is
orange-red transparent crystal.Gallium phosphide is used to make
inexpensive red, green and orange light-emitting diodes with low to
medium brightness. Its life is shorter at high currents, and its
life is also quite sensitive to temperature.Gallium phosphide (GaP)
is an inorganic compound and a semiconductor material with an
indirect energy gap of 2.26eV (300K). Its polycrystalline material
is light orange. Gallium phosphide is odorless and does not
dissolve in water.To become an N-type semiconductor, sulfur or
tellurium must be doped, and to make a P-type semiconductor, zinc
must be doped.
Features:
Semiconductor material Gallium phosphide referred to as Gap, is
composed of gallium (Ga) and phosphorus (P) synthesis of ⅲ-ⅴ group
compound semiconductor, at room temperature, its higher purity is
orange red transparent solid, Gallium phosphide is an important
material for the production of semiconductor visible light emitting
devices, mainly used for manufacturing rectifier, transistor, light
guide, laser diode and cooling elements. Gallium phosphide and
gallium arsenide are semiconductors with electroluminescent
properties and are the so-called third generation semiconductors
after germanium and silicon. Gallium arsenide LED has high quantum
efficiency, compact and simple device structure, high mechanical
strength and long service life, and can be used in "optical phone".
Parameters:
| Items | Parameters |
| Colour | Transparent Orange Red |
| Diameter | 50.6+0.3 |
| Thickness | 175 225 |
| Dopant | S |
| Density | 4.138 g/cm3 |
| Melting point | 1477 °C |
| Growth method | LEC |
| Solubility | Soluble |
| Orientation | (111)A 0°+0.2 |
| Refractive index | 4.3 |
| Warp | 10um |
| Bow | 10um |
| TTV | 10um |
| Grade | A |
Application:
Indium phosphide (InP) is a III~V compound with sphalerite crystal
structure, lattice constant of 5.87×10-10 m, band gap of 1.34 eV,
and mobility of 3000~4500 cm2 / (V.S) at room temperature. InP
crystals have many advantages, such as high saturated electron
drift speed, strong radiation resistance, good thermal conductivity
and high photoelectric conversion efficiency, and are widely used
in optical communication, high-frequency millimeter wave devices,
photoelectric integrated circuits and solar cells for outer space.
In the future, the demand for components will link the applications
of 5G communications, automotive electronics and optical
communications with the characteristics of high speed, high
frequency and high power, and the second and third generation
compound semiconductors are expected to break through Moore's Law
of silicon semiconductors.
Other product:
GaAs
wafers:
FAQ;
Q: What is the Brand Name of S Dopped GaP?
A: The Brand Name of S Dopped GaP is ZMSH.
Q: What is the Certification of S Dopped GaP?
A: The Certification of S Dopped GaP is ROHS.
Q: Where is the Place of Origin of S Dopped GaP?
A: The Place of Origin of S Dopped GaP is CHINA.
Q: What is the MOQ of S Dopped GaP at one time?
A: The MOQ of S Dopped GaP is 25pcs at one time.
