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4" 4H-Semi High Purity SIC Wafers Prime Grade Semiconductor EPI Substrates

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    Buy cheap 4" 4H-Semi High Purity SIC Wafers Prime Grade Semiconductor EPI Substrates from wholesalers
     
    Buy cheap 4" 4H-Semi High Purity SIC Wafers Prime Grade Semiconductor EPI Substrates from wholesalers
    • Buy cheap 4" 4H-Semi High Purity SIC Wafers Prime Grade Semiconductor EPI Substrates from wholesalers
    • Buy cheap 4" 4H-Semi High Purity SIC Wafers Prime Grade Semiconductor EPI Substrates from wholesalers
    • Buy cheap 4" 4H-Semi High Purity SIC Wafers Prime Grade Semiconductor EPI Substrates from wholesalers

    4" 4H-Semi High Purity SIC Wafers Prime Grade Semiconductor EPI Substrates

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    Brand Name : ZMSH
    Model Number : HPSI 4h-semi SIC
    Certification : ROHS
    Price : Negotiation
    Payment Terms : T/T
    Delivery Time : In 30 days
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    4" 4H-Semi High Purity SIC Wafers Prime Grade Semiconductor EPI Substrates

    4’’ 4H-Semi High-Purity SIC Wafers Prime Grade Semiconductor EPI Substrates


    Description of HP 4H-semi SIC:


    1. The high purity semi-insulating 4H-SiC (silicon carbide) wafers are very ideal semiconductor materials.


    2. Semi-insulated 4H-SiC sheet is prepared by high temperature pyrolysis, crystal growth and cutting process.


    3. High-purity semi-insulated 4H-SiC sheets have lower carrier concentrations and higher insulation properties.


    4. 4H-SiC is a hexagonal lattice. This crystal structure gives 4H-SiC excellent physical and electrical properties.


    5. The process requires high purity of raw materials and precision to ensure the silicon wafer a consistent structure.


    Features of HP 4H-semi SIC:


    The high purity semi-insulated 4H-SiC (silicon carbide) sheet is an ideal semiconductor material:


    1. Band gap width: Generally, 4H-SiC has a wide band gap width of about 3.26 electron volts (eV).


    2. Due to its thermal stability and insulation properties, 4H-SiC can operate in a wide temperature range.


    3. 4H-SiC has a high resistance to radiation used in nuclear energy and high energy physics experiments.


    4. 4H-SiC has high hardness and mechanical strength, which makes it have excellent stability and reliability.


    5. 4H-SiC has a high electron mobility in the range of 100-800 square centimeters /(volts · second) (cm^2/(V·s).


    6. High thermal conductivity: 4H-SiC has a very high thermal conductivity, about 490-530 watts/m-kelle (W/(m·K).


    7. High voltage resistance: 4H-SiC has excellent voltage resistance, making it suitable for high voltage applications.


    Technical Parameters of HP 4H-semi SIC:



    Production

    Research

    Dummy

    Type

    4H

    4H

    4H

    Resistivity9(ohm·cm)

    ≥1E9

    100% area>1E5

    70% area>1E5

    Diameter

    99.5~100mm

    99.5~100mm

    99.5~100mm

    Thickness

    500±25μm

    500±25μm

    500±25μm

    On-axis

    <0001>

    <0001>

    <0001>

    Off-axis

    0± 0.25°

    0± 0.25°

    0± 0.25°

    Secondary flat length

    18± 1.5mm

    18± 1.5mm

    18± 1.5mm

    TTV

    ≤5μm

    ≤10μm

    ≤20μm

    LTV

    ≤2μm(5mm*5mm)

    ≤5μm(5mm*5mm)

    NA

    Bow

    -15μm~15μm

    -35μm~35μm

    -45μm~45μm

    Warp

    ≤20μm

    ≤45μm

    ≤50μm

    Ra(5μm*5μm)

    Ra≤0.2nm

    Ra≤0.2nm

    Ra≤0.2nm

    Micropipe Density

    ≤1ea/cm2

    ≤5ea/cm2

    ≤10ea/cm2

    Edge

    Chamfer

    Chamfer

    Chamfer


    Applications of HP 4H-semi SIC:


    High purity semi-insulated 4H-SiC (silicon carbide) sheets are widely used in many fields:


    1. Optoelectronic devices: Semi-insulated 4H-SiC is widely used in the manufacture of optoelectronic devices.


    2. Rf and microwave devices: The high electron mobility and low loss characteristics of semi-insulated 4H-SiC.


    3. Other fields: Semi-insulated 4H-SiC also has some applications in other fields, such as irradiation detectors.


    4. Due to the high thermal conductivity and excellent mechanical strength of 4H-semi SiC in extreme temperature.


    5. Power electronic devices: Semi-insulated 4H-SiC is widely used in the manufacture of high-power power devices.



    Other related product HP 4-H-semi SIC:


    4H-N SIC



    FAQ about HPSI 4H-semi SIC:


    Q: What is the Brand Name of HPSI 4h-semi SIC?

    A: The Brand Name of HPSI 4h-semi SIC is ZMSH.


    Q: What is the Certification of HPSI 4h-semi SIC?

    A: The Certification of HPSI 4h-semi SIC is ROHS.


    Q: Where is the Place of Origin of HPSI 4h-semi SIC?

    A: The Place of Origin of HPSI 4h-semi SIC is CHINA.


    Q: What is the MOQ of HPSI 4h-semi SIC at one time?

    A: The MOQ of HPSI 4h-semi SIC is 25pcs at one time.


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