6’’ High Purity Silicon 4H-Semi SIC Dummy Grade Semiconductor
Wafers 5G LED
Description:
Semi-Insulating 4H-SiC (semi-insulating 4H-SIC) is a special type of silicon carbide material. In the crystal structure, 4H-semiconductor SIC has semiconductor
properties, while semi-insulated 4H-semiconductor silicon carbide
has higher resistance characteristics, showing properties similar
to insulators. Semi-insulated 4H-semiconductor silicon carbide has important applications in semiconductor device manufacturing, esp. in high power and high temperature
applications. Due to its higher resistance properties, semi-insulated silicon carbide can be used as a resistor, isolation layer, or substrates to help reduce current interconnection and interference between
devices."4H" indicates the crystal structure of silicon carbide. 4H-silicon-carbide is a form of crystal structure in which silicon and carbon atoms
to form a stable crystal structure.
Features:
Features | Descriptions |
High-temperature property | 4H-semiconductor silicon carbide has excellent high temperature
characteristics and can work in high temperature environments. |
High pressure resistance | 4H- semiconductor silicon carbide has high breakdown electric field
strength and voltage resistance. This makes it suitable for high
voltage applications such as power electronics. |
High requency response | 4H-semiconductor silicon carbide has high electron mobility and low
capacitance characteristics, enabling high-speed switching and
low-loss power conversion. |
Low on-off loss | 4H-semi SIC has a low on-off loss, that is, less energy loss in the
conductive state, reducing heat loss in energy conversion. |
High radiation resistance | 4H-semi SIC has a high resistance to radiation and can maintain
stable performance in high radiation environments. |
Good thermal conductivity | 4H-semi SIC has good thermal conductivity and can effectively
transfer and disperse heat. |
High chemical resistance | 4H-semi SIC has high resistance to chemical corrosion and oxidation
to maintain stable performance in harsh environments. |
Technical Parameters:
| Production | Research | Dummy |
Type | 4H | 4H | 4H |
Resistivity(ohm·cm) | ≥1E9 | 100% area＞1E5 | 70% area＞1E5 |
Diameter | 150± 0.2mm | 150± 0.2mm | 150± 0.2mm |
Thickness | 500±25μm | 500±25μm | 500±25μm |
Axis | <0001> | <0001> | <0001> |
TTV | ≤5μm | ≤10μm | ≤20μm |
LTV(5mm*5mm) | ≤3μm | ≤5μm | ≤10μm |
Bow | -25μm~25μm | -35μm~35μm | -45μm~45μm |
Warp | ≤35μm | ≤45μm | ≤55μm |
Ra(5um*5um) | Ra≤0.2nm | Ra≤0.2nm | Ra≤0.2nm |
Micropipe Density | ≤1ea/cm2 | ≤10ea/cm2 | ≤15ea/cm2 |
Applications:
1. High purity 4H-semi SIC substrate can be used in power
electronic devices.
2. High purity 4H-semi SIC can be used to manufacture
optoelectronic devices.
3. High purity 4H-semi SIC can be used as high-frequency power
amplifiers devices.
4. High purity 4H-semi SIC can be used can be used to manufacture
efficient solar cells.
5. High purity 4H-semi SIC can be used to manufacture LED (light
emitting diode) devices.
6. High purity 4H-semi SIC has important applications in high
temperature electronic devices.
7. High purity 4H-semi SIC can be used can be used to manufacture
various types of sensors
Other related produc:
4H-N
SIC:
FAQ:
Q: What is the Certification of HPSI 4h-semi SIC?
A: The Certification of HPSI 4h-semi SIC is ROHS.
Q: What is the Brand Name of HPSI 4h-semi SIC?
A: The Brand Name of HPSI 4h-semi SICis ZMSH.
Q: Where is the Place of Origin of HPSI 4h-semi SIC?
A: The Place of Origin of HPSI 4h-semi SIC is CHINA.
Q: What is the MOQ of HPSI 4h-semi SIC at one time?
A: The MOQ of HPSI 4h-semi SIC is 25pcs at one time.
