4inch dia100m 4H-N type Production grade DUMMY grade SiC
substrates,Silicon Carbide substrates for semiconductor device,
Application areas
1 high frequency and high power electronic devices Schottky diodes,
JFET, BJT, PiN, diodes, IGBT, MOSFET
2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate
material (GaN/SiC) LED
Advantagement
• Low lattice mismatch
• High thermal conductivity
• Low power consumption
• Excellent transient characteristics
• High band gap
Silicon Carbide SiC crystal substrate wafer carborundum
SILICON CARBIDE MATERIAL PROPERTIES
| Product Name: | Silicon carbide (SiC) crystal substrate |
| Product Description: | 2-6inch |
| Technical parameters: | | Cell structure | Hexagonal | | Lattice constant | a = 3.08 Å c = 15.08 Å | | Priorities | ABCACB (6H) | | Growth method | MOCVD | | Direction | Growth axis or Partial (0001) 3.5 ° | | Polishing | Si surface polishing | | Bandgap | 2.93 eV (indirect) | | Conductivity type | N or seimi ,high purity | | Resistivity | 0.076 ohm-cm | | Permittivity | e (11) = e (22) = 9.66 e (33) = 10.33 | | Thermal conductivity @ 300K | 5 W / cm. K | | Hardness | 9.2 Mohs |
|
| Specifications: | 6H N-type 4H N-type semi-insulating dia2 "x0.33mm, dia2"
x0.43mm,dia2''x1mmt, 10x10mm, 10x5mm Single throw or double throw,
Ra <10A |
| Standard Packaging: | 1000 clean room, 100 clean bag or single box packaging |
2. substrates size of standard
4 inch diameter Silicon Carbide (SiC) Substrate Specification |
| Grade | Zero MPD Grade | Production Grade | Research Grade | Dummy Grade |
| Diameter | 100.0 mm±0.5 mm |
| Thickness | 350 μm±25μm (200-500um thickness also is ok) |
| Wafer Orientation | Off axis : 4.0° toward <1120> ±0.5° for 4H-N/4H-SI On axis :
<0001>±0.5° for 6H-N/6H-SI/4H-N/4H-SI |
| Micropipe Density | ≤1 cm-2 | ≤5 cm-2 | ≤15 cm-2 | ≤50 cm-2 |
| Resistivity | 4H-N | 0.015~0.028 Ω•cm |
| 6H-N | 0.02~0.1 Ω•cm |
| 4/6H-SI | ≥1E5 Ω·cm |
| Primary Flat and length | {10-10}±5.0° ,32.5 mm±2.0 mm |
| Secondary Flat Length | 18.0mm±2.0 mm |
| Secondary Flat Orientation | Silicon face up: 90° CW. from Prime flat ±5.0° |
| Edge exclusion | 3 mm |
| TTV/Bow /Warp | ≤15μm /≤25μm /≤40μm |
| Roughness | Polish Ra≤1 nm ,CMP Ra≤0.5 nm |
| Cracks by high intensity light | None | 1 allowed, ≤2 mm | Cumulative length ≤ 10mm, single length≤2mm |
|
| Hex Plates by high intensity light | Cumulative area ≤1% | Cumulative area ≤1% | Cumulative area ≤3% |
| Polytype Areas by high intensity light | None | Cumulative area ≤2% | Cumulative area ≤5% |
| Scratches by high intensity light | 3 scratches to 1×wafer diameter cumulative length | 5 scratches to 1×wafer diameter cumulative length | 5 scratches to 1×wafer diameter cumulative length |
| edge chip | None | 3 allowed, ≤0.5 mm each | 5 allowed, ≤1 mm each |
| Contamination by high intensity light | None |
Sic wafer ＆ ingots 2-6inch and other customized size also can be
provided.
3.Pictures of delivery Products before
Delivery ＆ Package
