SiC Wafer
SiC crystal are cutted into slices, and polishing, the SiC wafer
comes. For specification and details, please visit below page.
SiC crystal growth
Bulk crystal growth is the technique for fabrication of single
crystalline substrates , making the base for further device
processing.To have a breakthrough in SiC technology obviously we
need production of SiC substrate with a reproducible process.6H-
and 4H- SiC crystals are grown in graphite crucibles at high
temperatures up to 2100—2500°C. The operating temperature in the
crucible is provided either by inductive (RF) or resistive heating.
The growth occurs on thin SiC seeds. The source represents
polycrystalline SiC powder charge. The SiC vapor in the growth
chamber mainly consists of three species, namely, Si, Si2C, and
SiC2, which are diluted by carrier gas, for example, Argon. The SiC
source evolution includes both time variation of porosity and
granule diameter and graphitization of the powder granules.
SiC epi wafer
We can cost-effectively produce very high quality epitaxial
structures for device or testing purposes.The silicon carbide (SiC)
epitaxial wafer poses many advantages in comparision with
conventional Si wafers, We can offer epi layer in very large range
of doping concentration 1E15/cm3 from low 1014 to 1019 cm-3 for
more information.
SiC Crystal Structure
SiC Crystal has many different crystal structures,which is called
polytypes.The most common polytypes of SiC presently being
developed for electronics are the cubic 3C-SiC, the hexagonal
4H-SiC and 6H-SiC, and the rhombohedral 15R-SiC. These polytypes
are characterized by the stacking sequence of the biatom layers of
the SiC structure
sic crystal defects
Most of the defects which were observed in SiC were also observed
in other crystalline materials. Like the dislocations, stacking
faults (SFs), low angle boundaries (LABs) and twins. Some others
appear in materials having the Zing- Blend or the Wurtzite
structure, like the IDBs. Micropipes and inclusions from other
phases mainly appear in SiC.
SiC crystal application
Many researchers know the general SiC application:III-V Nitride
Deposition;Optoelectronic Devices;High Power Devices;High
Temperature Devices;High Frequency Power Devices.But few people
knows detail applications, We list some detail
material application and advantagement
• Low lattice mismatch
• High thermal conductivity
• Low power consumption
• Excellent transient characteristics
• High band gap
Applications:
• GaN epitaxy device
• Optoelectronic device
• High frequency device
• High power device
• High temperature device
• Light emitting diodes
