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N - Type Gallium Arsenide Wafer GaAs Single Crystal Substrates 2 - 6 Inch

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    Buy cheap N - Type Gallium Arsenide Wafer GaAs Single Crystal Substrates 2 - 6 Inch from wholesalers
     
    Buy cheap N - Type Gallium Arsenide Wafer GaAs Single Crystal Substrates 2 - 6 Inch from wholesalers
    • Buy cheap N - Type Gallium Arsenide Wafer GaAs Single Crystal Substrates 2 - 6 Inch from wholesalers
    • Buy cheap N - Type Gallium Arsenide Wafer GaAs Single Crystal Substrates 2 - 6 Inch from wholesalers

    N - Type Gallium Arsenide Wafer GaAs Single Crystal Substrates 2 - 6 Inch

    Ask Lasest Price
    Brand Name : zmsh
    Model Number : GaAs-3inch
    Certification : no
    Price : by case
    Supply Ability : 1000pcs/month
    Delivery Time : 1-4weeks
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    N - Type Gallium Arsenide Wafer GaAs Single Crystal Substrates 2 - 6 Inch


    3inch GaAs substrates, GaAs wafer for led,Gallium Arsenide crystal Wafers,Si/Zn Dopant GaAs wafer

    (A compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a zinc blende crystal structure)

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    GaAs) Gallium Arsenide Wafers

    we develops and manufactures compound semiconductor substrates

    the factory has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to polishing processing and built a 100-class clean room for wafer cleaning and packaging.

    Our GaAs wafer include 2~6 inch ingot/wafers for LED,LD and Microelectronics applications.

    We are always dedicated to improve the quality of currently substates and develop large size substrates.


    Application:

    1. Mainly used in electronics, low temperature alloys, Gallium Arsenide.

    2. The primary chemical compound of gallium in electronics, is used in microwave circuits, high-speed switching circuits, and infrared circuits.

    3. Gallium Nitride and Indium Gallium Nitride, for semiconductor uses, produce blue and violet light-emitting diodes (LEDs) and diode lasers.

    Specification


    ParameterGuaranteed / Actual ValuesUOM
    Growth Method:VGF
    Conduct Type:S-I-N
    Dopant:Undoped
    Diameter:76.2± 0.2mm
    Orientation:(100) 00± 0.50
    OF location/length:EJ [ 0-1-1]± 0.50/22±2
    IF location/length:EJ [ 0-1 1 ]± 0.50/11±2
    Resistivity:Min: 1E8Max: 1.03E8Ω·cm
    Mobility:Min: 5613Max: 6000cm2/v.s
    EPD:Min: 700Max: 800Max:
    Thickness:625±20µm
    Edge Rounding:0.375mmR
    Laser Marking:N/A
    TTV:N/Aµm
    Surface Finish– front:Polished
    Surface Finish –back:Etched
    Epi-Ready:

    Yes



    FAQ –
    Q: What you can supply logistics and cost?
    (1) We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
    (2) If you have your own express number, it's great.
    If not, we could assist you to deliver. Freight=USD25.0(the first weight) + USD12.0/kg

    Q: What's the delivery time?
    (1) For the standard products such as ball lens, powell lens and collimator lens:
    For inventory: the delivery is 5 workdays after order.
    For customized products: the delivery is 2 or 3 workweeks after order.
    (2) For the off-standard products, the delivery is 2 or 6 workweeks after you place the order.

    Q: How to pay?
    T/T, Paypal, West Union, MoneyGram, Secure payment and Trade Assurance on and etc..

    Q: What's the MOQ?
    (1) For inventory, the MOQ is 5pcs.
    (2) For customized products, the MOQ is 5pcs-20pcs.
    It depends on quantity and technics

    Q: Do you have inspection report for material?
    We can supply detail report for our products.

    Packaging – Logistcs
    Worldhawk concerns each details of the package , cleaning, anti-static , shock treatment . According to the quantity and shape of the product , we will take a different packaging process!


    Quality N - Type Gallium Arsenide Wafer GaAs Single Crystal Substrates 2 - 6 Inch for sale
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