6inch 1.0mmAluminum Nitride AlN Ceramic Substrate, High Thermal
Conductivity, Customized AlN Ceramic,6inch ceramic substrates
AlN Introduce
The aluminum nitride (AlN) ceramic has high thermal
conductivity(5-10 times as the alumina ceramic),
low dielectric constant and dissipation factor, good insulation and
excellent mechanical properties, non-toxic, high thermal
resistance, chemical resistance ,and the linear expansion
coefficient is similar with Si,which is widely used in
communication components, high power led, power electronic devices
and
other fields.Special spec products can be produced upon requests.
PRODUCT PERFORMANCE
High thermal conductivity, high flexural strength, high
temperature,Good electrical insulation
Low dielectric constant and loss
APPLICATIONS
RF/Microwave Components
Power Modulus
Power Transformers
High Power LED package
Laser Diode Sub-mounts
LED Chip Sub-mount
Microelectronic Packages
Transistors
Our cooperating factory can applied the casting-tape process for
the manufacturing of alumina substrate. With good thermal
conductivity, insulation, thermal shock resistance, well resistance
and anti-acid and
alkali etc., our ceramic substrates can be used in thick-film
hybrid integrated circuits (HIC), LED ceramic radiating base, power
module, semiconductor devices and other fields.
AlN Feature ＆ Advantagement
| - Product Name: | Aluminium Nitride / AIN Ceramic Substrate |
| - Material: | Aluminum Nitride / AlN |
| - Typical Characteristics: | 1. Very High Thermal Conductivity 2. Good Electrical Insulation 3. Corrosion Resistance 4. Good Flatness |
| - Typical Applications: | 1. Power Electronic Device 2. High Brightness LED 3. Communication Device |
Material Properties
| Properties / Material | 96% Alumina | AlN |
| Density (g/cm3) | 3.6 | 3.3 |
| Color | White | Grey |
| Dielectric Strength (KV/mm) | ≥17 | ≥17 |
| Dielectric Constant (1MHz) | 10.6 | 8.9 |
| Volume Resistivity (@20°C, Ω.cm) | ≥1014 | ≥1014 |
| Thermal Conductivity (@20°C, W/mk) | ≥24 | ≥175 |
| Thermal Expansion Coefficient (10-6/°C) | 6.5-8.0 | 4.8 |
| Flexural Strength (MPa) | ≥350 | ≥450
|
Regular Size
| Thickness(mm) | lengthx width ( mm) |
| 0.385 |
2″* 2″ 50.8mm*50.8mm
|
3″* 3″ 76.2mm*76.2mm
| 4″* 4″ 101.6mm*101.6mm | 4.5″* 4.5″ 114.3mm*114.3mm |
| 0.5 |
| 0.635 |
| 1.0 |
| diameter(mm) |
| 1.0 | Φ16 Φ19 | Φ20 Φ26 | Φ30 Φ35 | Φ40 Φ45 | Φ50 Φ52 | Φ60 | Φ75 | Φ80 |
| 1.2 |
| 1.5 |
| 2.0 |
| 2.5 |
| | | | | | | | | | | |
| Diameter (mm) | Thickness (mm) |
2'' (50.8mm ) OF 16mm | 3'' (76.2mm) OF22mm | 4'' (100mm) OF 30mm | 5“ (125mm) OF 42.5mm | 6" (150mm) OF 47.5mm | 0.385 |
| 0.5 |
| 0.65 |
| 1.0 |
Polishing Service
Our AlN substrate can be polished(single and double polish) by the
advanced machine which imported
from abroad. Ceramic substrate surface roughness can reach to 1nm
without porous after being polished.
It is perfectly suitable for the device application of small spec,
high precision , wiring density and good stability.
Package ＆ Delivery
